KSD5018
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KSD5018 (pdf) |
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KSD5018TU |
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KSD5018PWD |
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KSD5018 KSD5018 Built-in Resistor at B-E for Motor Drive • High Voltage Power Darlington TR TO-220 1.Base 2.Collector 3.Emitter NPN Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter Value Units VCBO VCEO VEBO IC ICP IB PC TJ TSTG Collector- Base Voltage Collector- Emitter Voltage Emitter Base Voltage Collector Current DC *Collector Current Pulse Base Current Collector Dissipation TC=25°C Junction Temperature Storage Temperature - 55 ~ 150 Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition VCEO sus BVCER ICES IEBO VCE sat VBE sat Collector-Emitter Sustaining Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 1.5A, IB = 0.05A, L = 25mH IC = 1mA, RBE = VCE = 500V V EB= 10V, IC = 0 IC = 2A, IB = 5mA IC = 3A, IB = 20mA IC = 2A, IB = 5mA Min. 275 600 Max. Units V mA V 2000 Fairchild Semiconductor International KSD5018 Typical Characteristics hFE, DC CURRENT GAIN 10000 V = 5V CE 1000 I [A], COLLECTOR CURRENT Figure Static Characteristic 1000 VBE sat , VCE sat [V], SATURATION VOLTAGE I = 400 I VBE sat 1 VCE sat IC[A], COLLECTOR CURRENT Figure Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage |
More datasheets: 10013057-451200ELF | 10013057-351200ELF | 10013057-311200ELF | 10013057-251200ELF | 10013057-211200ELF | 10013057-171200ELF | 10013057-391200ELF | CA06EW22-21PB02 | DCMY-21WA4P-K87 | KSD5018TU |
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