KSD288Y
KSD288Y Datasheet
KSD288
| Part | Datasheet |
|---|---|
KSD288Y |
KSD288Y (pdf) |
| Related Parts | Information |
|---|---|
|
KSD288YTU |
KSD288YTU |
|
KSD288WTU |
KSD288WTU |
|
KSD288W |
KSD288W |
|
KSD288OTU |
KSD288OTU |
|
KSD288O |
KSD288O |
| PDF Datasheet Preview |
|---|
| KSD288 KSD288 Power Regulator Low Frequency High Power Amplifier • Collector-Base Voltage VCBO=80V • Collector Dissipation PC=25W TC=25°C TO-220 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation TC=25°C Junction Temperature Storage Temperature Value 80 55 5 3 25 150 - 55 ~ 150 Units V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO hFE VCE sat Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage IC=500µA, IE=0 IC=10mA,IB=0 IE=500µA, IC=0 VCB=50V,IE=0 VCE=5V,IC=0.5A IC=1A, IB=0.1A Min. 80 55 5 Typ. Max. 50 240 Units V µA hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 2000 Fairchild Semiconductor International Typical Characteristics Ic[A], COLLECTOR CURRENT IB = 10mA IB = 9mA IB = 8mA IB = 7mA IB = 6mA IB = 5mA IB = 4mA |
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