KSD288W

KSD288W Datasheet


KSD288

Part Datasheet
KSD288W KSD288W KSD288W (pdf)
Related Parts Information
KSD288Y KSD288Y KSD288Y
KSD288YTU KSD288YTU KSD288YTU
KSD288WTU KSD288WTU KSD288WTU
KSD288OTU KSD288OTU KSD288OTU
KSD288O KSD288O KSD288O
PDF Datasheet Preview
KSD288

KSD288

Power Regulator

Low Frequency High Power Amplifier
• Collector-Base Voltage VCBO=80V
• Collector Dissipation PC=25W TC=25°C

TO-220
1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation TC=25°C Junction Temperature Storage Temperature

Value 80 55 5 3 25 150
- 55 ~ 150

Units V A W °C °C

Electrical Characteristics TC=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO BVEBO ICBO hFE VCE sat

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage

IC=500µA, IE=0 IC=10mA,IB=0 IE=500µA, IC=0 VCB=50V,IE=0 VCE=5V,IC=0.5A IC=1A, IB=0.1A

Min. 80 55 5

Typ.

Max.
50 240

Units V µA
hFE Classification

Classification hFE

R 40 ~ 80

O 70 ~ 140

Y 120 ~ 240
2000 Fairchild Semiconductor International

Typical Characteristics

Ic[A], COLLECTOR CURRENT

IB = 10mA

IB = 9mA

IB = 8mA

IB = 7mA

IB = 6mA

IB = 5mA

IB = 4mA
More datasheets: TUA 6020 | MDM-21PH005F | MDM-21PSA | CSMA174 | BCOMB | MDM-9PH046B | MB3773PF-G-BND-JN-ERE1 | KSD288Y | KSD288YTU | KSD288WTU


Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived KSD288W Datasheet file may be downloaded here without warranties.

Datasheet ID: KSD288W 634243