KSD227YBU
KSD227YBU Datasheet
KSD227
| Part | Datasheet |
|---|---|
KSD227YBU |
KSD227YBU (pdf) |
| Related Parts | Information |
|---|---|
|
KSD227GBU |
KSD227GBU |
|
KSD227GTA |
KSD227GTA |
|
KSD227YTA |
KSD227YTA |
| PDF Datasheet Preview |
|---|
| KSD227 KSD227 Low Frequency Power Amplifier • Complement to KSA642 • Collector Power Dissipation PC=400mW TO-92 Emitter Base Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 30 25 5 300 400 150 -55 ~ 150 Units V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO IEBO hFE VCE sat Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage IC=100µA, IE=0 IC=10mA, IB=0 IE=10µA, IC=0 VCB=25V, IE=0 VEB=3V, IC=0 VCE=1V, IC=50mA IC=300mA, IB=30mA Min. 30 25 5 Typ. Max. Units V µA µA hFE Classification Classification hFE O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400 2002 Fairchild Semiconductor Corporation KSD227 Typical Characteristics IC[mA], COLLECTOR CURRENT VBE sat , VCE sat [V], SATURATION VOLTAGE 450µA IB = 400µA 350µA IB = 300µA IB = 250µA IB = 200µA |
| More datasheets: LAW005F | LAW005CL | LAW005B | LAW005A | 8413S06BKILF | 8413S06BKILFT | XC2365A72F80LAAKXUMA1 | DD50SF179AA191 | KSD227GBU | KSD227GTA |
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