KSD1222TU
KSD1222TU Datasheet
KSD1222
| Part | Datasheet |
|---|---|
KSD1222TU |
KSD1222TU (pdf) |
| PDF Datasheet Preview |
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| KSD1222 KSD1222 Power Amplifier Applications • High DC Current Gain • Low Collector-Emitter Saturation Voltage • Built in a Damper Diode at E-C • Darlington TR • Complement to KSB907 I-PAK Base Collector Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation TC=25°C Collector Dissipation Ta=25°C Junction Temperature Storage Temperature Value 60 40 5 3 15 1 150 - 55 ~ 150 Units V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCEO ICBO IEBO hFE1 hFE2 VCE sat VBE sat tON tSTG tF Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn On Time Storage Time Fall Time IC = 25mA, IB = 0 VCB = 60V, IE = 0 VEB = 5V, IC = 0 VCE = 2V, IC = 1A VCE = 2V, IC = 3A IC = 2A, IB = 4mA IC = 2A, IB = 4mA VCC = 30V, IC = 3A IB1 = -IB2 = 6mA RL = Min. Typ. Max. Units 2000 1000 2001 Fairchild Semiconductor Corporation Typical Characteristics IC[A], COLLECTOR CURRENT IB =300µA 275µA 250µA 225µA 200µA IB = 175µA IB = 0 VCE[V], COLLECTOR-EMITTER VOLTAGE |
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