KSA1304
Part | Datasheet |
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KSA1304YTU (pdf) |
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KSA1304OTU |
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KSA1304 KSA1304 Vertical Output Applications Power Amplifier Applications • Complement to KSC3296 TO-220F 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation TC=25°C Junction Temperature Storage Temperature Ratings - 150 - 150 -5 - - 20 150 - 55 ~ 150 Units V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition ICBO IEBO hFE VCE sat VBE on fT Cob Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance VCB = - 120V, IE = 0 VEB = - 5V, IC = 0 VCE = - 10V, IC = - 500mA IC= - 500mA, IB = - 50mA VCE = - 10V, IC = - 500mA VCE = - 10V, IC = - 500mA VCB = - 10V, f = 1MHz Min. Typ. Max. - 10 - 10 140 - - Units µA µA V MHz pF 2000 Fairchild Semiconductor International KSA1304 Typical Characteristics IC[A], COLLECTOR CURRENT IB = -150mA IB = -100mA IB = -50mA IB = -40mA IB = -30mA IB = -20mA IB = -15mA IB = -10mA IB = -5mA IB = 0mA VCE[V], COLLECTOR-EMITTER VOLTAGE Figure Static Characteristic 1000 100 VCE = -10V hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT Figure DC current Gain |
More datasheets: LPSJ603.Z | LPSJ601.ZXID | LPSJ303.ZXID | LPSJ603.ZXID | LPSJ602.Z | US3J2PAK | 1206L100WR | 1206L150PR | 1206L160PR | KSA1304OTU |
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