KSD1021YBU

KSD1021YBU Datasheet

KSD1021

Part	Datasheet
KSD1021YBU	KSD1021YBU (pdf)

Related Parts	Information
KSD1021YTA	KSD1021YTA
KSD1021GTA	KSD1021GTA
KSD1021GBU	KSD1021GBU

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KSD1021 KSD1021 Audio Frequency Power Amplifier • Complement to KSB811 • Collector Current IC=1A • Collector Dissipation PC=350mW TO-92S 1.Emitter Collector Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 40 30 5 1 350 150 -55 ~ 150 Units V A mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO hFE VCE sat VBE sat fT Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Band Width Product Output Capacitance IC=100µA, IE=0 IC=10mA, IB=0 IE=100µA, IC=0 VCB=30V, IE=0 VCE=1V, IC=100mA IC=1A, IB=0.1A IC=1A, IB=0.1A VCE=6V, IC=10mA VCB=6V, IE=0, f=1MHz Min. 40 30 5 Typ. 130 16 Max. Units V µA V MHz pF hFE Classification Classification hFE O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400 2001 Fairchild Semiconductor Corporation KSD1021 Typical Characteristics IC[A], COLLECTOR CURRENT IB = 5.0mA IB = 4.5mA IB = 4.0mA IB = 3.5mA IB = 3.0mA

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KSD1021

KSD1021

Audio Frequency Power Amplifier
• Complement to KSB811
• Collector Current IC=1A
• Collector Dissipation PC=350mW

TO-92S
1.Emitter Collector Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature

Ratings 40 30 5 1 350 150
-55 ~ 150

Units V A
mW °C °C

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO BVEBO ICBO hFE VCE sat VBE sat fT Cob

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Band Width Product Output Capacitance

IC=100µA, IE=0 IC=10mA, IB=0 IE=100µA, IC=0 VCB=30V, IE=0 VCE=1V, IC=100mA IC=1A, IB=0.1A IC=1A, IB=0.1A VCE=6V, IC=10mA VCB=6V, IE=0, f=1MHz

Min. 40 30 5

Typ.
130 16

Max.

Units V µA

V MHz pF
hFE Classification

Classification hFE

O 70 ~ 140

Y 120 ~ 240

G 200 ~ 400
2001 Fairchild Semiconductor Corporation

KSD1021

Typical Characteristics

IC[A], COLLECTOR CURRENT

IB = 5.0mA

IB = 4.5mA

IB = 4.0mA

IB = 3.5mA

IB = 3.0mA

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Datasheet ID: KSD1021YBU 634230