KSD1021GTA
KSD1021GTA Datasheet
KSD1021
| Part | Datasheet |
|---|---|
KSD1021GTA |
KSD1021GTA (pdf) |
| Related Parts | Information |
|---|---|
KSD1021YTA |
KSD1021YTA |
KSD1021GBU |
KSD1021GBU |
KSD1021YBU |
KSD1021YBU |
| PDF Datasheet Preview |
|---|
| KSD1021 KSD1021 Audio Frequency Power Amplifier • Complement to KSB811 • Collector Current IC=1A • Collector Dissipation PC=350mW TO-92S 1.Emitter Collector Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 40 30 5 1 350 150 -55 ~ 150 Units V A mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO hFE VCE sat VBE sat fT Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Band Width Product Output Capacitance IC=100µA, IE=0 IC=10mA, IB=0 IE=100µA, IC=0 VCB=30V, IE=0 VCE=1V, IC=100mA IC=1A, IB=0.1A IC=1A, IB=0.1A VCE=6V, IC=10mA VCB=6V, IE=0, f=1MHz Min. 40 30 5 Typ. 130 16 Max. Units V µA V MHz pF hFE Classification Classification hFE O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400 2001 Fairchild Semiconductor Corporation KSD1021 Typical Characteristics IC[A], COLLECTOR CURRENT IB = 5.0mA IB = 4.5mA IB = 4.0mA IB = 3.5mA IB = 3.0mA |
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