KSC900CGTA
KSC900CGTA Datasheet
KSC900
| Part | Datasheet |
|---|---|
KSC900CGTA |
KSC900CGTA (pdf) |
| Related Parts | Information |
|---|---|
|
KSC900CYTA |
KSC900CYTA |
|
KSC900GTA |
KSC900GTA |
|
KSC900LTA |
KSC900LTA |
|
KSC900LBU |
KSC900LBU |
| PDF Datasheet Preview |
|---|
| KSC900 KSC900 Low Frequency & Low Noise Amplifier • Collector-Base Voltage VCBO=30V • Low Noise Level NL=50mV MAX • Suffix “-C” means Center Collector Emitter Collector Base TO-92 Emitter Base Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 30 25 5 50 250 150 -55 ~ 150 Units V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO IEBO hFE VCE sat VBE on fT NL Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Noise Level IC=100µA, IE=0 IC=10mA, IB=0 IE=10µA, IC=0 VCB=25V, IE=0 VEB=3V, IC=0 VCE=3V, IC=0.5mA IC=20mA, IB=2mA VCE=3V, IC=0.5mA VCE=3V, IC=1mA VCC=12V, IC=0.1mA AV=80dB, f=1KHz Min. 30 25 5 Typ. 100 30 Max. 50 100 1000 Units V nA V MHz mV hFE Classification Classification hFE Y 120 ~ 240 G 200 ~ 400 L 350 ~ 700 V 600 ~ 1000 2002 Fairchild Semiconductor Corporation Typical Characteristics IC[mA], COLLECTOR CURRENT VBE sat , VCE sat [V], SATURATION VOLTAGE IB = 90µA 80µA 70µA |
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