KSC838CYTA

KSC838CYTA Datasheet

KSC838

Part	Datasheet
KSC838CYTA	KSC838CYTA (pdf)

Related Parts	Information
KSC838COTA	KSC838COTA
KSC838COBU	KSC838COBU
KSC838YTA	KSC838YTA
KSC838CYBU	KSC838CYBU
KSC838OBU	KSC838OBU
KSC838YBU	KSC838YBU
KSC838OTA	KSC838OTA

PDF Datasheet Preview
KSC838 KSC838 FM Radio RF AMP, MIX, CONV, OSC, IF AMP • High Current Gain Bandwidth Product fT=250MHz TYP. • Suffix “-C” means Center Collector Emitter Collector Base TO-92 Emitter Base Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 35 30 4 30 250 150 -55 ~ 150 Units V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO IEBO hFE VBE on VCE sat fT Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter On Voltage Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance IC=100µA, IE=0 IC=5mA, IB=0 IE=10µA, IC=0 VCB=30V, IE=0 VEB=4V, IC=0 VCE=12V, IC=2mA VCE=6V, IC=1mA IC=10mA, IB=1mA VCE=10V, IC=1mA VCB=10V, IE=0, f=1MHz Min. Typ. Max. Units hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 2001 Fairchild Semiconductor Corporation KSC838 Typical Characteristics IC[mA], COLLECTOR CURRENT VBE sat , VCE sat [V], SATURATION VOLTAGE IB = 90µA 80µA 70µA 60µA 50µA 40µA 30µA 20µA IB = 10µA

PDF Datasheet Preview

KSC838

KSC838

FM Radio RF AMP, MIX, CONV, OSC, IF AMP
• High Current Gain Bandwidth Product fT=250MHz TYP.
• Suffix “-C” means Center Collector Emitter Collector Base

TO-92

Emitter Base Collector

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature

Value 35 30 4 30 250 150
-55 ~ 150

Units V mA
mW °C °C

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO BVEBO ICBO IEBO hFE VBE on VCE sat fT Cob

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter On Voltage Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance

IC=100µA, IE=0 IC=5mA, IB=0 IE=10µA, IC=0 VCB=30V, IE=0 VEB=4V, IC=0 VCE=12V, IC=2mA VCE=6V, IC=1mA IC=10mA, IB=1mA VCE=10V, IC=1mA VCB=10V, IE=0, f=1MHz

Min. Typ. Max. Units
hFE Classification

Classification hFE

R 40 ~ 80

O 70 ~ 140

Y 120 ~ 240
2001 Fairchild Semiconductor Corporation

KSC838

Typical Characteristics

IC[mA], COLLECTOR CURRENT

VBE sat , VCE sat [V], SATURATION VOLTAGE

IB = 90µA
80µA
70µA
60µA
50µA
40µA
30µA
20µA

IB = 10µA

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Datasheet ID: KSC838CYTA 634226