MJD29CTF
MJD29CTF Datasheet
MJD29/29C
| Part | Datasheet |
|---|---|
MJD29CTF |
MJD29CTF (pdf) |
| PDF Datasheet Preview |
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| MJD29/29C MJD29/29C General Purpose Amplifier Low Speed Switching Applications • Load Formed for Surface Mount Application No Suffix • Straight Lead I-PAK, “- I” Suffix • Electrically Similar to Popular TIP29 and TIP29C D-PAK 1 I-PAK 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage MJD29 MJD29C VCEO VEBO IC ICP IB PC TJ TSTG Collector-Emitter Voltage MJD29 MJD29C Emitter-Base Voltage Collector Current DC Collector Current Pulse Base Current Collector Dissipation TC=25°C Collector Dissipation Ta=25°C Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO sus ICEO ICES IEBO hFE Parameter *Collector-Emitter Sustaining Voltage MJD29 MJD29C Collector Cut-off Current MJD29 MJD29C Collector Cut-off Current MJD29 MJD29C Emitter Cut-off Current *DC Current Gain VCE sat *Collector-Emitter Saturation Voltage VBE on *Base-Emitter ON Voltage Current Gain Bandwidth Product * Pulse Test PW 300µs, Duty Cycle 2% Test Condition IC = 30mA, IB = 0 VCE = 40V, IB = 0 VCE = 60V, IB = 0 VCE = 40V, VBE = 0 VCE = 100V, VBE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 0.2A VCE = 4V, IC = 1A IC = 1A, IB = 125mA VCE = 4A, IC = 1A VCE = 10V, IC = 200mA Value 40 100 40 100 5 1 3 15 150 - 65 ~ 150 Min. 40 100 |
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