KSC5020O
KSC5020O Datasheet
KSC5020
| Part | Datasheet |
|---|---|
KSC5020O |
KSC5020O (pdf) |
| PDF Datasheet Preview |
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| KSC5020 KSC5020 High Voltage, High Quality • High Speed Switching tF=0.1µs • Wide SOA TO-220 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Current Pulse Base Current DC Collector Dissipation TC=25°C Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO VCEX sus Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 IC = 1.5A, IB1=-IB2= 0.6A L = 2mH, Clamped ICBO IEBO hFE1 hFE2 VCE sat VBE sat Cob fT tON tSTG tF Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time VCB = 500V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.3A VCE = 5V, IC = 1.5A IC = 1.5A, IB = 0.3A IC = 1.5A, IB = 0.3A VCB = 10V, f = 1MHz VCE = 10V, IC = 0.3A VCC = 200V IC=5IB1 = -2.5IB2=2A RL = hFE Classification Classification hFE1 R 15 ~ 30 O 20 ~ 40 Value 800 500 7 3 6 1 40 150 - 55 ~ 150 Units V A W °C °C Min. 800 500 7 500 Typ. Max. Units V Y 30 ~ 50 2002 Fairchild Semiconductor Corporation Typical Characteristics |
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