KSC3076YTU
KSC3076YTU Datasheet
KSC3076
| Part | Datasheet |
|---|---|
KSC3076YTU |
KSC3076YTU (pdf) |
| PDF Datasheet Preview |
|---|
| KSC3076 KSC3076 Power Amplifier Applications • Low Collector-Emitter Saturation Voltage • Complement to KSA 1241 I-PACK Base Collector Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Ta=25°C Collector Dissipation TC=25°C Junction Temperature Storage Temperature Value 50 5 2 1 10 150 - 55 ~ 150 Units V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCEO ICBO IEBO hFE1 hFE2 VCE sat VBE sat fT Cob tON tSTG tF Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time IC = 10mA, IB = 0 VCB = 50V, IE = 0 VEB = 5V, IC = 0 VCE = 2V, IC= 0.5A VCE = 2V, IC = 1.5A IC = 1A, IB = 0.05A IC = 1A, IB = 0.05A VCE = 2V, IC = 0.5A VCB = 10V, f = 1MHz VCC = 30V, IC = 1A 1B1 = - I B2 = 0.05A RL = Min. 50 70 40 Typ. 100 30 1 Max. 1 240 Units V µA µA hFE1 Classification Classification hFE1 O 70 ~ 140 Y 120 ~ 240 2000 Fairchild Semiconductor International KSC3076 Package Demensions I-PAK |
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