KSC2787YTA

KSC2787YTA Datasheet

KSC2787

Part	Datasheet
KSC2787YTA	KSC2787YTA (pdf)

Related Parts	Information
KSC2787OBU	KSC2787OBU
KSC2787OTA	KSC2787OTA
KSC2787YBU	KSC2787YBU
KSC2787RTA	KSC2787RTA
KSC2787RBU	KSC2787RBU

PDF Datasheet Preview
KSC2787 KSC2787 FM/AM RF AMP, MIX, CONV, OSC, IF • Collector-Emitter Voltage VCEO=30V • High Current Gain Bandwidth Product fT=300MHz TYP • Low Output Capacitance Cob=2.0pF TYP TO-92S 1.Emitter Collector Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 50 30 5 50 250 150 -55 ~ 150 Units V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO IEBO hFE VBE on VCE sat fT Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter On Voltage Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance IC=10µA, IE=0 IC=5mA, IB=0 IE=10µA, IC=0 VCB=50V, IE=0 VEB=5V, IC=0 VCE=6V, IC=1mA VCE=6V, IC=1mA IC=10mA, IB=1mA VCE=6V, IC=1mA VCB=6V, IE=0, f=1MHz Min. 50 30 5 Typ. Max. Units V µA µA V MHz pF hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 2002 Fairchild Semiconductor Corporation KSC2787 Typical Characteristics IC [mA], COLLECTOR CURRENT 70µA 60µA 50µA IB = 40µA 30µA IB = 20µA

PDF Datasheet Preview

KSC2787

KSC2787

FM/AM RF AMP, MIX, CONV, OSC, IF
• Collector-Emitter Voltage VCEO=30V
• High Current Gain Bandwidth Product fT=300MHz TYP
• Low Output Capacitance Cob=2.0pF TYP

TO-92S
1.Emitter Collector Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature

Value 50 30 5 50 250 150
-55 ~ 150

Units V mA
mW °C °C

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO BVEBO ICBO IEBO hFE VBE on VCE sat fT Cob

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter On Voltage Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance

IC=10µA, IE=0 IC=5mA, IB=0 IE=10µA, IC=0 VCB=50V, IE=0 VEB=5V, IC=0 VCE=6V, IC=1mA VCE=6V, IC=1mA IC=10mA, IB=1mA VCE=6V, IC=1mA VCB=6V, IE=0, f=1MHz

Min. 50 30 5

Typ.

Max.

Units V µA µA

V MHz pF
hFE Classification

Classification hFE

R 40 ~ 80

O 70 ~ 140

Y 120 ~ 240
2002 Fairchild Semiconductor Corporation

KSC2787

Typical Characteristics

IC [mA], COLLECTOR CURRENT
70µA
60µA
50µA

IB = 40µA
30µA

IB = 20µA

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Datasheet ID: KSC2787YTA 634202