SFM9014TF
SFM9014TF Datasheet
SFM9014
| Part | Datasheet |
|---|---|
SFM9014TF |
SFM9014TF (pdf) |
| PDF Datasheet Preview |
|---|
| Advanced Power MOSFET ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current 10 µA Max. VDS = -60V ! Lower RDS ON Typ. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TA=25oC Continuous Drain Current TA=70oC Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation TA=25oC * Linear Derating Factor * Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds SFM9014 BVDSS = -60 V RDS on = ID = A SOT-223 Gate Drain Source Value -60 -14 ±!" 110 - 55 to +150 Units V A V mJ A mJ V/ns W/oC Thermal Resistance Characteristic Junction-to-Ambient * Typ. -- * When mounted on the minimum pad size recommended PCB Mount . Max. 45 Units oC/W SFM9014 P-CHANNEL POWER MOSFET Electrical Characteristics TC=25oC unless otherwise specified Symbol BVDSS VGS th IGSS |
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