KSC2233

KSC2233 Datasheet

KSC2233

Part	Datasheet
KSC2233	KSC2233 (pdf)

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KSC2233 KSC2233 B/W TV Horizontal Deflection Output • Collector-Base Voltage VCBO = 200V • Collector Current DC IC = 4A • Collector Dissipation PC = 40W TO-220 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation TC=25°C Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO hFE1 hFE2 VCE sat VBE sat fT Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product IC = 1mA, IE = 0 IC = 20mA, IB =0 IE = 1mA, IC = 0 VCB = 170V, IE = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 4A IC = 4A, IB = 0.4A IC = 4A, IB = 0.4A VCE = 5V, IC = 0.5A Value 200 60 5 4 40 150 -55 ~ +150 Units V A W °C °C Min. 200 60 30 20 Typ. 40 10 Max. 10 150 Units V µA 2000 Fairchild Semiconductor International Typical Characteristics IC[A], COLLECTOR CURRENT IB = 50 mA IB = 45 mA IB = 40 mA IB = 35 mA IB = 30 mA IB = 25 mA IB = 20 mA IB = 15 mA IB = 10 mA IB = 5 mA VCE[V], COLLECTOR-EMITTER VOLTAGE

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KSC2233

KSC2233

B/W TV Horizontal Deflection Output
• Collector-Base Voltage VCBO = 200V
• Collector Current DC IC = 4A
• Collector Dissipation PC = 40W

TO-220
1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation TC=25°C Junction Temperature Storage Temperature

Electrical Characteristics TC=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO BVEBO ICBO hFE1 hFE2 VCE sat VBE sat fT

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product

IC = 1mA, IE = 0 IC = 20mA, IB =0 IE = 1mA, IC = 0 VCB = 170V, IE = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 4A IC = 4A, IB = 0.4A IC = 4A, IB = 0.4A VCE = 5V, IC = 0.5A

Value 200 60
5 4 40 150 -55 ~ +150

Units V A W °C °C

Min. 200 60
30 20

Typ.
40 10

Max.
10 150

Units V µA
2000 Fairchild Semiconductor International

Typical Characteristics

IC[A], COLLECTOR CURRENT

IB = 50 mA IB = 45 mA

IB = 40 mA

IB = 35 mA

IB = 30 mA

IB = 25 mA

IB = 20 mA

IB = 15 mA

IB = 10 mA

IB = 5 mA

VCE[V], COLLECTOR-EMITTER VOLTAGE

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Datasheet ID: KSC2233 634184