KSC2001GTA
KSC2001GTA Datasheet
KSC2001
| Part | Datasheet |
|---|---|
KSC2001GTA |
KSC2001GTA (pdf) |
| Related Parts | Information |
|---|---|
|
KSC2001GBU |
KSC2001GBU |
|
KSC2001OBU |
KSC2001OBU |
|
KSC2001YBU |
KSC2001YBU |
|
KSC2001YTA |
KSC2001YTA |
| PDF Datasheet Preview |
|---|
| KSC2001 KSC2001 General Purpose Applications • High hFE and Low VCE sat TO-92 Emitter Collector Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Value 30 25 5 700 150 600 150 -55 ~ 150 Units V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition VBE on * Base Emitter On Voltage ICBO Collector Cut-off Current IEBO Emitter Cut-off Current hFE1 hFE2 * DC Current Gain VCE sat * Collector-Emitter Saturation Voltage VBE sat * Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product * Pulse test Duty VCE=6V, IC=10mA VCB=30V, IE=0 VEB=5V, IC=0 VCE=1V, IC=100mA VCE=1V, IC=700mA IC=700mA, IB=70mA IC=700mA, IB=70mA VCB=6V, IE=0, f=1MHz VCE=6V, IC=10mA Min. 600 90 50 Typ. 640 200 140 13 170 Max. 700 100 400 Units mV nA hFE Classification Classification hFE1 O 90 ~ 180 Y 135 ~ 270 |
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