KSB834O

KSB834O Datasheet

KSB834

Part	Datasheet
KSB834O	KSB834O (pdf)

Related Parts	Information
KSB834YTU	KSB834YTU
KSB834Y	KSB834Y

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KSB834 KSB834 Low Frequency Power Amplifier • Complement to KSD880 TO-220 1.Base 2.Collector 3.Emitter PNP Silicon Epitaxial Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation TC=25°C Collector Dissipation Ta=25°C Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition ICBO IEBO BVCEO hFE1 hFE2 VCE sat VBE on fT Cob Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance VCB = - 60V, IE = 0 VEB = - 7V, IC = 0 IC = - 50mA, IB = 0 VCE = - 5V, IC = - 0.5A VCE = - 5V, IC = - 3A IC = - 3A, IB = - 0.3A VCE = - 5V, IC = - 0.5A VCE = - 5V, IC = - 0.5A VCB = - 10V, IE = 0 f = 1MHz tON TSTG tF Turn ON Time Storage Time Fall Time VCC = -30V, IC = - 1A IB1 = - IB2 = - 0.2A RL = hFE Classification Classification hFE1 O 60 ~ 120 Value - 60 - 60 -7 -3 - 30 150 - 55 ~ 150 Units V A W °C °C Min. - 60 20 Typ. 9 150 Max. - 100 - 100 Units µA µA V Y 100 ~ 200 2001 Fairchild Semiconductor Corporation Typical Characteristics IC A , COLLECTOR CURRENT CE SAT V , SATURATION VOLTAGE EMITTER COMMON TC=25℃ IB=-80mA IB=-70mA

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KSB834

KSB834

Low Frequency Power Amplifier
• Complement to KSD880

TO-220
1.Base 2.Collector 3.Emitter

PNP Silicon Epitaxial Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC IB PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation TC=25°C Collector Dissipation Ta=25°C Junction Temperature Storage Temperature

Electrical Characteristics TC=25°C unless otherwise noted

Parameter

Test Condition

ICBO IEBO BVCEO hFE1 hFE2 VCE sat VBE on fT Cob

Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain

Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance

VCB = - 60V, IE = 0 VEB = - 7V, IC = 0 IC = - 50mA, IB = 0 VCE = - 5V, IC = - 0.5A VCE = - 5V, IC = - 3A IC = - 3A, IB = - 0.3A VCE = - 5V, IC = - 0.5A VCE = - 5V, IC = - 0.5A VCB = - 10V, IE = 0 f = 1MHz
tON TSTG tF

Turn ON Time Storage Time Fall Time

VCC = -30V, IC = - 1A IB1 = - IB2 = - 0.2A RL =
hFE Classification

Classification hFE1

O 60 ~ 120

Value - 60 - 60 -7 -3 - 30 150
- 55 ~ 150

Units V A W °C °C

Min.
- 60 20

Typ.
9 150

Max. - 100 - 100

Units µA µA V

Y 100 ~ 200
2001 Fairchild Semiconductor Corporation

Typical Characteristics

IC A , COLLECTOR CURRENT

CE SAT V , SATURATION VOLTAGE

EMITTER COMMON

TC=25℃

IB=-80mA IB=-70mA

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Datasheet ID: KSB834O 634175