KSB811YBU

KSB811YBU Datasheet

KSB811

Part	Datasheet
KSB811YBU	KSB811YBU (pdf)

Related Parts	Information
KSB811GTA	KSB811GTA
KSB811YTA	KSB811YTA
KSB811OBU	KSB811OBU
KSB811GBU	KSB811GBU
KSB811OTA	KSB811OTA

PDF Datasheet Preview
KSB811 KSB811 Audio Frequency Power Amplifier • Complement to KSD1021 • Collector Current IC= -1A • Collector Power Dissipation PC=350mW TO-92S 1.Emitter Collector Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -30 -25 -5 350 150 -55 ~ 150 Units V A mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO hFE VCE sat VBE sat fT Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance IC= -100µA, IE= 0 IC= -10mA, IB= 0 IE= -100µA, IC= 0 VCB= -30V, IE=0 VCE= -1V, IC= -100mA IC= -1A, IB= -0.1A IC= -1A, IB= -0.1A VCE= -6V, IC= -10mA VCB= -6V, IE=0, f=1MHz Min. -30 -25 -5 Typ. 110 18 Max. Units V µA V MHz pF hFE Classification Classification hFE O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400 2001 Fairchild Semiconductor Corporation Typical Characteristics IC[A], COLLECTOR CURRENT IB = -8mA IB = -7mA IB = -6mA IB = -5mA IB = -4mA IB = -3mA IB = -2mA IB = -1mA -1 -2 -3 -4 -5 -6 -7 -8 -9 -10

PDF Datasheet Preview

KSB811

KSB811

Audio Frequency Power Amplifier
• Complement to KSD1021
• Collector Current IC= -1A
• Collector Power Dissipation PC=350mW

TO-92S
1.Emitter Collector Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature

Ratings -30 -25 -5 350 150
-55 ~ 150

Units V A
mW °C °C

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO BVEBO ICBO hFE VCE sat VBE sat fT Cob

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance

IC= -100µA, IE= 0 IC= -10mA, IB= 0 IE= -100µA, IC= 0 VCB= -30V, IE=0 VCE= -1V, IC= -100mA IC= -1A, IB= -0.1A IC= -1A, IB= -0.1A VCE= -6V, IC= -10mA VCB= -6V, IE=0, f=1MHz

Min. -30 -25 -5

Typ.
110 18

Max.

Units V µA

V MHz pF
hFE Classification

Classification hFE

O 70 ~ 140

Y 120 ~ 240

G 200 ~ 400
2001 Fairchild Semiconductor Corporation

Typical Characteristics

IC[A], COLLECTOR CURRENT

IB = -8mA

IB = -7mA IB = -6mA IB = -5mA IB = -4mA

IB = -3mA

IB = -2mA

IB = -1mA
-1 -2 -3 -4 -5 -6 -7 -8 -9 -10

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Datasheet ID: KSB811YBU 634174