KSB1023TU
KSB1023TU Datasheet
KSB1023
| Part | Datasheet |
|---|---|
KSB1023TU |
KSB1023TU (pdf) |
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| KSB1023 KSB1023 Power Amplifier Applications • High DC Current Gain • Low Collector-Emitter Saturation Voltage • Complement to KSD1413 TO-220F 1.Base 2.Collector 3.Emitter PNP Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC ICP IB PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Current Pulse Base Current Collector Dissipation Ta=25°C Collector Dissipation TC=25°C Junction Temperature TSTG Storage Temperature Value - 60 - 40 -5 -3 -6 - 2 20 150 - 55 ~ 150 Units V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCEO ICBO IEBO hFE1 hFE2 VCE sat VBE sat tON tSTG tF Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time IC = - 25mA, IB = 0 VCB = - 60V, IE = 0 VEB = - 5V, IC = 0 VCE = - 2V, IC = - 1A VCE = - 2V, IC = - 3A IC = - 2A, IB = - 4mA IC = - 2A, IB = - 4mA VCC = - 30V, IC = - 3A IB1 = - IB2 = - 6mA RL = Min. - 40 2000 1000 Typ. Max. - 20 - Units V µA mA V µs µs µs 2000 Fairchild Semiconductor International Typical Characteristics IC[A], COLLECTOR CURRENT IB = -300uA = -275uA = -250uA IB = -225uA |
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