KSA1614
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KSA1614YTU (pdf) |
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KSA1614 KSA1614 Low Frequency Power Amplifier Power Regulator • Collector-Base Voltage VCBO = - 80V • Collector Dissipation PC=20W TC=25°C PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation TC=25°C Junction Temperature Storage Temperature TO-220F 1.Base 2.Collector 3.Emitter Ratings - 80 - 55 -5 -3 20 150 - 55 ~ 150 Units V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO hFE VBE sat Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage IC = - 500µA, IE = 0 IC = - 10mA, IB = 0 IE = - 500µA, IC = 0 VCB = - 50V, IB = 0 VCE = - 5V, IC = - 0.5A IC = - 1A, IB = - 0.1A Min. - 80 - 55 -5 Typ. - Max. - 50 240 - Units V µA hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 2000 Fairchild Semiconductor International Typical Characteristics Ic[A], COLLECTOR CURRENT VBE sat , VCE sat [V], SATURATION VOLTAGE IB = -10mA IB = -9mA IB = -8mA IB = -7mA IB = -6mA IB = -5mA |
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