IRGBC30FD2
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IRGBC30FD2 (pdf) |
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IRGBC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve n-channel Fast CoPack IGBT VCES = 600V VCE sat 2.1V = 15V, IC = 31A Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications. Absolute Maximum Ratings VCES IC TC = 25°C IC TC = 100°C ICM ILM IF TC = 100°C IFM VGE PD TC = 25°C PD TC = 100°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Thermal Resistance Parameter Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight C-101 TO-220AB Max. 600 31 17 120 12 120 ± 20 100 42 -55 to +150 300 in. 1.6mm from case 10 lbf•in N•m Units V Min. Typ. Max. 80 Units °C/W IRGBC30FD2 Electrical Characteristics TJ = 25°C unless otherwise specified Parameter Min. Typ. Max. Units Conditions V BR CES VCE on Collector-to-Emitter Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE th gfe ICES Gate Threshold Voltage Temp. Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop IGES Gate-to-Emitter Leakage Current 600 V VGE = 0V, IC = 250µA V/°C VGE = 0V, IC = 1.0mA IC = 17A |
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