KSA1244
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KSA1244OTU (pdf) |
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KSA1244YTU |
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KSA1244 KSA1244 High Current Switching • Low Collector-Emitter Saturation Voltage • Complement to KSC3074 I-PACK Base Collector Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IB IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Collector Dissipation Ta=25°C Collector Dissipation TC=25°C Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCEO ICBO IEBO hFE1 hFE2 VCE Sat VBE Sat fT Cob tON tSTG tF Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time IC = - 10mA, IB = 0 VCB = - 50V, IE = 0 VEB = - 5V, IC = 0 VCE = - 1V, IC = - 1A VCE = - 1V, IC = - 3A IC = - 3A, IB = - 0.15A IC = - 3A, IC = - 0.15A VCE = - 4V, IC = - 1A VCB = - 10V, f = 1MHz VCC = - 30V, IC = - 3A IB1 = -I B2 = - 0.15A RL = hFE Classification Classification hFE1 O 70 ~ 140 Ratings - 60 - 50 -5 -1 -5 1 20 150 - 55 ~ 150 Units V A W °C °C Min. - 50 70 30 Typ. - 60 170 1 Max. -1 -1 240 Units V µA µA Y 120 ~ 240 2000 Fairchild Semiconductor International Typical Characteristics IC[A], COLLECTOR CURRENT IB = -80mA IB = -70mA IB = -60mA IB = -50mA IB = -40mA IB = -30mA |
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