KSA1203 PNP Epitaxial Silicon Transistor
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KSA1203OTF (pdf) |
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KSA1203 PNP Epitaxial Silicon Transistor July 2005 KSA1203 PNP Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output application • Collector Power Dissipation PC=1~2W Mounted on Ceramic Board • Complement to KSC2883 Marking SOT-89 Base Collector Emitter 12 PY Absolute Maximum Ratings Ta = 25°C unless otherwise noted Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature TSTG Storage Temperature * Mounted on Ceramic Board 250mm2 x 0.8mm Electrical Characteristics Ta = 25°C unless otherwise noted Parameter Test Condition BVCEO BVEBO ICBO IEBO hFE VCE sat VBE on fT Cob Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance IC = -10mA, IB = 0 IE = -1mA, IC = 0 VCB = -30V, IE = 0 VBE = -5V, IC = 0 VCE = -2V, IC = -500mA IC = -1.5A, IB = -30mA VCE = -2V, IC = -500mA VCE = -2V, IC = -500mA VCB = -10V, IE = 0, f = 1MHz Weekly code Year code hFE grage Ratings -30 -30 -5 500 1,000 150 -55 ~ 150 Units V A mW °C °C Min. -30 -5 Typ. Max. -100 -100 320 Package Marking and Ordering Information Device Marking 1203 Device KSA1203 Package SOT-89 Reel Size 13” 160 ~ 320 Tape Width Quantity 4,000 KSA1203 PNP Epitaxial Silicon Transistor 1ms 10ms Typical Performance Characteristics Figure Static Characteristic Figure DC Current Gain IB =-10mA IB =-8mA IC[A], COLLECTOR CURRENT IB =-6mA IB =-4mA IB =-3mA IB =-2mA IB =-1mA IB =0mA VCE[V], COLLECTOR-EMITTER VOLTAGE Figure Collector-Emitter Saturation Voltage 1000 100 VCE = -2V hFE, DC CURRENT GAIN 10 -1 -100 -1000 IC[mA], COLLECTOR CURRENT Figure Base-Emitter On Voltage -10000 VCE sat [V], SATURATION VOLTAGE IC = 50IB -100 -1000 |
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