KSA1174FBU
KSA1174FBU Datasheet
KSA1174
| Part | Datasheet |
|---|---|
KSA1174FBU |
KSA1174FBU (pdf) |
| Related Parts | Information |
|---|---|
KSA1174FTA |
KSA1174FTA |
KSA1174PBU |
KSA1174PBU |
KSA1174PTA |
KSA1174PTA |
| PDF Datasheet Preview |
|---|
| KSA1174 KSA1174 Audio Frequency Low Noise Amplifier • Complement to KSC2784 TO-92S 1.Emitter Collector Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -120 -120 -5 -50 -10 300 150 -55 ~ 150 Units V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition ICBO ICEO IEBO hFE1 hFE2 VBE on VCE sat fT Cob NV Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter On Voltage Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Voltage VCB= -120V, IE=0 VCE= -100V, IB=0 VEB= -5V, IC= 0 VCE= -6V, IC= -0.1mA VCE= -6V, IC= -1mA VCE= -6V, IC= -1mA IC= -10mA, IB= -1mA VCE= -6V, IC= -1mA VCB= -30V, IE= 0, f=1MHz Min. 150 200 50 Typ. 500 100 Max. -50 -1 -50 Units nA µA nA V MHz pF mV hFE2 Classification Classification hFE2 P 200 ~ 400 F 300 ~ 600 E 400 ~ 800 2002 Fairchild Semiconductor Corporation Typical Characteristics IC[mA], COLLECTOR CURRENT IB = -1.4µA IB = -1.2µA IB = -1.0µA IB = -0.8µA IB = -0.6µA IB = -0.4µA |
| More datasheets: HSDL-3020-021 | DCM-37S-L | 86272-BX | 86272 | MDM-37SH003M2 | SPM0423HD4H-WB | 76650-0098 | MDM-9PH023B | 8610-60G | KSA1174FTA |
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