ISL9K30120G3

ISL9K30120G3 Datasheet

ISL9K30120G3

Part	Datasheet
ISL9K30120G3	ISL9K30120G3 (pdf)

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ISL9K30120G3 May 2002 ISL9K30120G3 30A, 1200V Stealth Dual Diode This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM REC and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth diode with a 1200V NPT IGBT to provide the most efficient and highest power density design at lower cost. Formerly developmental type TA49415. • Switch Mode Power Supplies • Hard Switched PFC Boost Diode • UPS Free Wheeling Diode • Motor Drive FWD • SMPS FWD • Snubber Diode Package JEDEC STYLE TO-247 CATHODE BOTTOM SIDE METAL ANODE 2 CATHODE ANODE 1 Device Maximum Ratings per leg TC = 25°C unless otherwise noted Parameter Ratings Units VRRM VRWM VR IF AV DC Blocking Voltage Average Rectified Forward Current TC = 80oC Total Device Current Both Legs 1200 1200 1200 IFRM IFSM PD EAVL TJ, TSTG TL TPKG Repetitive Peak Surge Current 20kHz Square Wave Nonrepetitive Peak Surge Current Halfwave 1 Phase 60Hz Power Dissipation Avalanche Energy 1A, 40mH Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s Package Body for 10s, See Application Note AN-7528 -55 to 150 CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. 2002 Fairchild Semiconductor Corporation ISL9K30120G3 Package Marking and Ordering Information Device Marking K30120G3 Device ISL9K30120G3 Package TO-247 Tape Width N/A Quantity 30 Electrical Characteristics per leg TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off State Characteristics VR = 1200V TC = 25°C TC = 125°C - 100 µA On State Characteristics VF Instantaneous Forward Voltage IF = 30A TC = 25°C TC = 125°C - V - V Dynamic Characteristics CJ Junction Capacitance VR = 10V, IF = 0A - 115 - Switching Characteristics trr IRM REC QRR trr S IRM REC QRR trr S IRM REC QRR dIM/dt IF = 1A, dIF/dt = 100A/µs, VR = 15V IF = 30A, dIF/dt = 100A/µs, VR = 15V - IF = 30A, dIF/dt = 200A/µs, VR = 780V, TC = 25°C IF = 30A, dIF/dt = 200A/µs, VR = 780V, TC = 125°C IF = 30A, dIF/dt = 1000A/µs, VR = 780V, TC = 125°C

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ISL9K30120G3

May 2002

ISL9K30120G3
30A, 1200V Stealth Dual Diode

This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM REC and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth diode with a 1200V NPT IGBT to provide the most efficient and highest power density design at lower cost.

Formerly developmental type TA49415.
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode

Package

JEDEC STYLE TO-247

CATHODE BOTTOM SIDE

METAL

ANODE 2 CATHODE ANODE 1

Device Maximum Ratings per leg TC = 25°C unless otherwise noted

Parameter

Ratings

Units

VRRM VRWM

VR IF AV

DC Blocking Voltage Average Rectified Forward Current TC = 80oC Total Device Current Both Legs
1200
1200
1200

IFRM IFSM PD EAVL TJ, TSTG TL TPKG

Repetitive Peak Surge Current 20kHz Square Wave Nonrepetitive Peak Surge Current Halfwave 1 Phase 60Hz Power Dissipation Avalanche Energy 1A, 40mH Operating and Storage Temperature Range Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s Package Body for 10s, See Application Note AN-7528
-55 to 150

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
2002 Fairchild Semiconductor Corporation

ISL9K30120G3
Package Marking and Ordering Information

Device Marking K30120G3

Device ISL9K30120G3

Package TO-247

Tape Width N/A

Quantity 30

Electrical Characteristics per leg TC = 25°C unless otherwise noted

Parameter

Test Conditions

Min Typ Max Units

Off State Characteristics

VR = 1200V

TC = 25°C TC = 125°C
- 100 µA

On State Characteristics

VF Instantaneous Forward Voltage

IF = 30A

TC = 25°C TC = 125°C
- V - V

Dynamic Characteristics

CJ Junction Capacitance

VR = 10V, IF = 0A
- 115 -

Switching Characteristics
trr IRM REC

QRR trr S

IRM REC QRR trr S

IRM REC QRR dIM/dt

IF = 1A, dIF/dt = 100A/µs, VR = 15V

IF = 30A, dIF/dt = 100A/µs, VR = 15V -

IF = 30A,
dIF/dt = 200A/µs,

VR = 780V, TC = 25°C

IF = 30A,
dIF/dt = 200A/µs,

VR = 780V,

TC = 125°C

IF = 30A,
dIF/dt = 1000A/µs,

VR = 780V,

TC = 125°C

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Datasheet ID: ISL9K30120G3 634079