NPT1007B
NPT1007B Datasheet
NPT1007
| Part | Datasheet |
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NPT1007B |
NPT1007B (pdf) |
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| NPT1007 Gallium Nitride 28V, 200W RF Power Transistor Built using the NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for narrowband and broadband applications from DC 1200MHz • 200W P3dB CW power at 900MHz in quadrature combined or push-pull configuration • 90W CW power from 500-1000MHz in application design AD-014 • High efficiency from 14V to 28V • °C/W RTH with maximum TJ rating of 200°C • Robust up to 10:1 VSWR mismatch at all angles with no device degradation • Subject to EAR99 export control DC 1200 MHz 14 28 Volt GaN HEMT RF Specifications CW VDS = 28V, IDQ = 1400mA1, Frequency = 900MHz, TA = 25°C, Measured in Nitronex Quadrature Combined Test Fixture2. Symbol Parameter Units P3dB Average Output Power at 3dB Gain Compression Small Signal Gain Drain Efficiency at 3dB Gain Compression21 VSWR 10:1 VSWR at all phase angles No change in device performance Note 1 700mA per transistor. Each gate should be biased independently to set desired IDQ. Note 2 Includes ~ dB quadrature combiner loss. Typical 2-Tone Performance VDS = 28V, IDQ = 1400mA1, Frequency = 900MHz, Tone spacing = 1MHz, TA = 25°C Measured in Nitronex Quadrature Combined Test Fixture2 Symbol Parameter Units P3dB,PEP Peak Envelope Power at 3dB Gain Compression P1dB,PEP Peak Envelope Power at 1dB Gain Compression PIMD3 Peak Envelope Power at -35dBc IMD3 Note 1 700mA per transistor. Each gate should be biased independently to set desired IDQ. Note 2 Includes ~ dB quadrature combiner loss. NPT1007 NPT1007 DC Specifications Per Transistor, TA = 25°C Symbol Parameter Off Characteristics VBDS IDLK Drain-Source Breakdown Voltage VGS = -8V, ID = 36mA Drain-Source Leakage Current VGS = -8V, VDS = 60V On Characteristics VT VGSQ RON ID,MAX Gate Threshold Voltage VDS = 28V, ID = 36mA Gate Quiescent Voltage VDS = 28V, ID = 700mA Ordering Information1 Part Number Description NPT1007B NPT1007 in AC780B-4 Metal-Ceramic Bolt-Down Package 1 To find a Nitronex contact in your area, visit our website at Figure 13 - AC780B-4 Metal-Ceramic Package Dimensions and Pinout all dimensions are in inches [mm] NPT1007 Page 6 NPT1007 Nitronex, LLC 2305 Presidential Drive Durham, NC 27703 USA telephone fax Additional Information This part is lead-free and is compliant with the RoHS directive Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment . Important Notice Nitronex, LLC reserves the right to make corrections, modifications, enhancements, improvements and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to Nitronex terms and conditions of sale supplied at the time of order acknowledgment. The latest information from Nitronex can be found either by calling Nitronex at 1-919-807-9100 or visiting our website at Nitronex warrants performance of its packaged semiconductor or die to the specifications applicable at the time of sale in accordance with Nitronex standard warranty. Testing and other quality control techniques are used to the extent Nitronex deems necessary to support the warranty. 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All other product or service names are the property of their respective owners. Nitronex, LLC All rights reserved. NPT1007 Page 7 |
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