IRLS630A
IRLS630A Datasheet
IRLS630A
| Part | Datasheet |
|---|---|
IRLS630A |
IRLS630A (pdf) |
| PDF Datasheet Preview |
|---|
| Advanced Power MOSFET ! Logic-Level Gate Drive ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current 10 uA Max. VDS = 200V ! Lower RDS ON Typ. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TC=25℃ Continuous Drain Current TC=100℃ Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation TC=25℃ Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8＂ from case for 5-seconds IRLS630A BVDSS = 200 V RDS on = Ω ID = A TO-220F 1.Gate Drain Source Value 200 32 ±20 56 5 36 - 55 to +150 Units V A V mJ A mJ V/ns W/℃ Thermal Resistance Characteristic Junction-to-Case Junction-to-Ambient Typ. --- Max. Units oC/W IRLS630A N-CHANNEL POWER MOSFET Electrical Characteristics TC=25℃ unless otherwise specified Symbol BVDSS VGS th IGSS IDSS |
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