IRLM210ATF

IRLM210ATF Datasheet

IRLM210A

Part	Datasheet
IRLM210ATF	IRLM210ATF (pdf)

PDF Datasheet Preview
Advanced Power MOSFET n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current 10 µA Max. VDS = 200V n Lower RDS ON Typ. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TA=25oC Continuous Drain Current TA=70oC Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation TA=25oC * Linear Derating Factor * Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8＂ from case for 5-seconds IRLM210A BVDSS = 200 V RDS on = ID = A SOT-223 Gate Drain Source Value 200 ±20 27 - 55 to +150 Units V A V mJ A mJ V/ns W/oC Thermal Resistance Characteristic Junction-to-Ambient * Typ. -- * When mounted on the minimum pad size recommended PCB Mount . Max. Units oC/W IRLM210A N-CHANNEL POWER MOSFET Electrical Characteristics TC=25oC unless otherwise specified Symbol BVDSS VGS th IGSS

PDF Datasheet Preview

Advanced Power MOSFET
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current 10 µA Max. VDS = 200V n Lower RDS ON Typ.

Absolute Maximum Ratings

Symbol VDSS ID

IDM VGS EAS IAR EAR dv/dt PD

TJ , TSTG

Characteristic

Drain-to-Source Voltage

Continuous Drain Current TA=25oC Continuous Drain Current TA=70oC

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation TA=25oC *

Linear Derating Factor *

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8＂ from case for 5-seconds

IRLM210A

BVDSS = 200 V RDS on = ID = A

SOT-223

Gate Drain Source

Value 200 ±20 27
- 55 to +150

Units V

A V mJ A mJ V/ns W/oC

Thermal Resistance

Characteristic Junction-to-Ambient *

Typ. --
* When mounted on the minimum pad size recommended PCB Mount .

Max.

Units oC/W

IRLM210A

N-CHANNEL POWER MOSFET

Electrical Characteristics TC=25oC unless otherwise specified

Symbol BVDSS

VGS th

IGSS

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Datasheet ID: IRLM210ATF 634068