IRFR420BTM

IRFR420BTM Datasheet

IRFR420B / IRFU420B

Part	Datasheet
IRFR420BTM	IRFR420BTM (pdf)

PDF Datasheet Preview
IRFR420B / IRFU420B November 2001 IRFR420B / IRFU420B 500V N-Channel MOSFET These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge. • 2.3A, 500V, RDS on = = 10 V • Low gate charge typical 14 nC • Low Crss typical 10 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability D-PAK IRFR Series I-PAK IRFU Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, Tstg TL Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds ● ● IRFR420B / IRFU420B 500 ± 30 200 41 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient

PDF Datasheet Preview

IRFR420B / IRFU420B

November 2001

IRFR420B / IRFU420B
500V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.
• 2.3A, 500V, RDS on = = 10 V
• Low gate charge typical 14 nC
• Low Crss typical 10 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

D-PAK

IRFR Series

I-PAK

IRFU Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, Tstg TL

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TA = 25°C * Power Dissipation TC = 25°C
- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
● ●

IRFR420B / IRFU420B 500 ± 30 200 41
-55 to +150

Units V A V mJ A mJ

V/ns W

W/°C °C

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived IRFR420BTM Datasheet file may be downloaded here without warranties.

Datasheet ID: IRFR420BTM 634033