HUFA76609D3ST_F085
HUFA76609D3ST_F085 Datasheet
HUFA76609D3ST_F085
| Part | Datasheet |
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HUFA76609D3ST_F085 |
HUFA76609D3ST_F085 (pdf) |
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| HUFA76609D3ST_F085 Data Sheet 10A, 100V, Ohm, N-Channel, Logic Level Power MOSFET Packaging JEDEC TO-252AA DRAIN FLANGE GATE SOURCE HUFA76609D3ST_F085 November 2008 • Ultra Low On-Resistance - rDS ON = VGS = 10V - rDS ON = VGS = 5V • Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models - • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves • Qualified to AEC Q101 • RoHS Compliant Ordering Information PACKAGE BRAND HUFA76609D3ST_F085 TO-252AA 76609D NOTE Part is only available in tape and reel. Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUFA76609D3ST_F085 UNITS Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS ±16 Drain Current Continuous = = = = 11220055o00oCCooCC,, Pulsed Drain Current IDM Figure 4 Pulsed Avalanche Rating UIS Figures 6, 17, 18 Power Dissipation Derate Above 25oC Operating and StorageTemperature TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s TL Package Body for 10s, See Tech brief TB334 Tpkg NOTE TJ = 25oC to 150oC. 49 -55 to 175 300 260 W/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: Reliability data can be found at All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2008 Fairchild Semiconductor Corporation HUFA76609D3ST_F085 Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ON STATE SPECIFICATIONS BVDSS IDSS IGSS ID = 250µA, VGS = 0V Figure 12 ID = 250µA, VGS = 0V, TC = -40oC Figure 12 |
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