IXFJ40N30Q

IXFJ40N30Q Datasheet

IXFJ 40N30

Part	Datasheet
IXFJ40N30Q	IXFJ40N30Q (pdf)

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet IXFJ 40N30 VDSS = 300 V ID25 = 40 A RDS on = 80 mW trr < 200 ns Symbol VDSS VDGR VGS V ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Weight V DSS VGS th IGSS I RDS on Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150°C, RG = 2 W TC = 25°C mm in. from case for 10 s Maximum Ratings ±20 ±30 5 V/ns -55 +150 -55 +150 Test Conditions Characteristic Values TJ = 25°C, unless otherwise specified min. typ. max. VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 V = • V VGS = 0 V 25°C TJ = 125°C VGS = 10 V, ID = ID25 Pulse test, t 300 ms, duty cycle d 2 % ±100 nA 200 mA 1 mA 80 mW G = Gate, S = Source, D = Drain, TAB = Drain • Low profile, high power package • Long creep and strike distances • Easy up-grade path for TO-220 designs • Low R HDMOSTM process DS on Rugged polysilicon gate

PDF Datasheet Preview

HiPerFETTM Power MOSFETs

N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family

Preliminary data sheet

IXFJ 40N30

VDSS = 300 V ID25 = 40 A RDS on = 80 mW
trr < 200 ns

Symbol VDSS VDGR VGS V

ID25 IDM IAR EAR dv/dt

PD TJ TJM Tstg TL Weight

V DSS

VGS th IGSS I

RDS on

Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150°C, RG = 2 W TC = 25°C
mm in. from case for 10 s

Maximum Ratings
±20
±30
5 V/ns
-55 +150
-55 +150

Test Conditions

Characteristic Values

TJ = 25°C, unless otherwise specified min. typ. max.

VDS = VGS, ID = 4 mA

VGS = ±20 VDC, VDS = 0

V =
• V

VGS = 0 V
25°C

TJ = 125°C

VGS = 10 V, ID = ID25 Pulse test, t 300 ms, duty cycle d 2 %
±100 nA
200 mA 1 mA
80 mW

G = Gate, S = Source,

D = Drain, TAB = Drain
• Low profile, high power package
• Long creep and strike distances
• Easy up-grade path for TO-220
designs
• Low R HDMOSTM process

DS on

Rugged polysilicon
gate

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Datasheet ID: IXFJ40N30Q 644272