HUFA76413DK8T

HUFA76413DK8T Datasheet

HUFA76413DK8T

Part	Datasheet
HUFA76413DK8T	HUFA76413DK8T (pdf)

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HUFA76413DK8T January 2003 HUFA76413DK8T N-Channel Logic Level Power MOSFET 60V, 4.8A, • Motor and Load Control • Powertrain Management • 150°C Maximum Junction Temperature • UIS Capability Single Pulse and Repetitive Pulse • Ultra-Low On-Resistance rDS ON = VGS = 10V • Ultra-Low On-Resistance rDS ON = VGS = 5V D1 8 D1 7 D2 6 D2 5 SO-8 S1 1 G1 2 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC = 25oC, VGS = 10V Continuous TC = 25oC, VGS = 5V Continuous TC = 125oC, VGS = 5V, = 228oC/W Pulsed Single Pulse Avalanche Energy Note 1 Power dissipation Derate above 25oC Operating and Storage Temperature S2 3 G2 4 Ratings 60 ±16 1 Figure 4 260 -55 to 150 Units V A mJ W/oC Thermal Characteristics Thermal Resistance Junction to Ambient SO-8 Note 2 Thermal Resistance Junction to Ambient SO-8 Note 3 Thermal Resistance Junction to Ambient SO-8 Note 4 oC/W oC/W oC/W This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: Reliability data can be found at All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2003 Fairchild Semiconductor Corporation HUFA76413DK8T Package Marking and Ordering Information Device Marking 76413DK8 Device HUFA76413DK8T Package SO-8 Reel Size 330mm Tape Width 12mm Quantity 2500 units Electrical Characteristics TA = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 50V VGS = 0V TA = 150oC VGS = ±16V On Characteristics VGS TH Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ID = 5.1A, VGS = 10V rDS ON Drain to Source On Resistance ID = 4.8A, VGS = 5V ID = 4.8A, VGS = 5V TA = 150oC Dynamic Characteristics CISS COSS CRSS Qg TOT Qg 5 Qg TH Qgs Qgd VDS = 25V, VGS = 0V, f = 1MHz VGS = 0V to 10V VGS = 0V to 5V VDD = 30V VGS = 0V to 1V ID = 4.8A Ig = 1.0mA Switching Characteristics VGS = 5V Turn-On Time td ON Turn-On Delay Time tr td OFF

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HUFA76413DK8T

January 2003

HUFA76413DK8T

N-Channel Logic Level Power MOSFET 60V, 4.8A,
• Motor and Load Control
• Powertrain Management
• 150°C Maximum Junction Temperature
• UIS Capability Single Pulse and Repetitive Pulse
• Ultra-Low On-Resistance rDS ON = VGS = 10V
• Ultra-Low On-Resistance rDS ON = VGS = 5V

D1 8 D1 7

D2 6 D2 5

SO-8

S1 1 G1 2

MOSFET Maximum Ratings TA = 25°C unless otherwise noted

Symbol VDSS VGS

EAS PD TJ, TSTG

Parameter Drain to Source Voltage

Gate to Source Voltage

Drain Current Continuous TC = 25oC, VGS = 10V Continuous TC = 25oC, VGS = 5V Continuous TC = 125oC, VGS = 5V, = 228oC/W Pulsed

Single Pulse Avalanche Energy Note 1

Power dissipation Derate above 25oC

Operating and Storage Temperature

S2 3 G2 4

Ratings 60 ±16
1 Figure 4 260 -55 to 150

Units V

A mJ W/oC

Thermal Characteristics

Thermal Resistance Junction to Ambient SO-8 Note 2 Thermal Resistance Junction to Ambient SO-8 Note 3 Thermal Resistance Junction to Ambient SO-8 Note 4
oC/W
oC/W
oC/W

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at:

Reliability data can be found at All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
2003 Fairchild Semiconductor Corporation

HUFA76413DK8T
Package Marking and Ordering Information

Device Marking 76413DK8

Device HUFA76413DK8T

Package SO-8

Reel Size 330mm

Tape Width 12mm

Quantity 2500 units

Electrical Characteristics TA = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Source Leakage Current

ID = 250µA, VGS = 0V

VDS = 50V VGS = 0V

TA = 150oC

VGS = ±16V

On Characteristics

VGS TH

Gate to Source Threshold Voltage

VGS = VDS, ID = 250µA

ID = 5.1A, VGS = 10V
rDS ON

Drain to Source On Resistance

ID = 4.8A, VGS = 5V ID = 4.8A, VGS = 5V TA = 150oC

Dynamic Characteristics

CISS COSS CRSS Qg TOT Qg 5 Qg TH Qgs Qgd

VDS = 25V, VGS = 0V, f = 1MHz

VGS = 0V to 10V

VGS = 0V to 5V VDD = 30V

VGS = 0V to 1V ID = 4.8A

Ig = 1.0mA

Switching Characteristics VGS = 5V

Turn-On Time
td ON

Turn-On Delay Time
tr td OFF

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Datasheet ID: HUFA76413DK8T 634002