MII300-12E4
MII300-12E4 Datasheet
MII 300-12 E4
| Part | Datasheet |
|---|---|
MII300-12E4 |
MII300-12E4 (pdf) |
| PDF Datasheet Preview |
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| IGBT Module phaseleg MII 300-12 E4 IC25 = 280 A VCES = 1200 V V = CE sat typ. V Preliminary data IGBTs T1 - T2 Symbol VCES Conditions TVJ = 25°C to 125°C Maximum Ratings 1200 V t• NPT3 IGBT - low saturation voltage - positive temperature coefficient VGES IC25 IC80 ICM VCEK tSC SCSOA Ptot VCE sat VGE th ICES IGES TC = 25°C ± 20 280 uV - fast switching - short tail current for optimized performance in resonant circuits TC = 80°C VGE = ±15 V RG = TVJ = 125°C RBSOA Clamped inductive load L = 100 µH o VCE = 900 V VGE = ±15 V RG = - TVJ = 125°C non-repetitive TC = 25°C 200 A 300 A VCES 10 µs 1100 W e Conditions a s IC = 200 A VGE = 15 V h IC = 6 mA VGE = VCE Characteristic Values TVJ = 25°C, unless otherwise specified min. typ. max. TVJ = 25°C TVJ = 125°C p VCE = VCES VGE = 0 V; VCE = 0 V VGE = ± 20 V TVJ = 25°C TVJ = 125°C 400 nA • Package - low inductive current path - screw connection to high current main terminals - use of non interchangeable connectors for auxiliary terminals possible - kelvin emitter terminal for easy drive - isolated ceramic base plate • drives - AC - DC • power supplies td on tr td off tf Eon Inductive load, TVJ = 125°C |
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