HUFA76407DK8T

HUFA76407DK8T Datasheet

HUFA76407DK8

Part	Datasheet
HUFA76407DK8T	HUFA76407DK8T (pdf)

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Data Sheet HUFA76407DK8 December 2001 3.5A, 60V, Ohm, Dual N-Channel, Logic Level Power MOSFET Packaging JEDEC MS-012AA BRANDING DASH 1 2 3 4 SOURCE1 1 GATE1 2 SOURCE2 3 GATE2 4 DRAIN 1 8 DRAIN 1 7 DRAIN 2 6 DRAIN 2 5 • Ultra Low On-Resistance - rDS ON = VGS = 10V - rDS ON = VGS = 5V • Simulation Models - Temperature Compensated and SABER Electrical Models - SPICE and SABER Thermal Impedance Models - • Peak Current vs Pulse Width Curve • UIS Rating Curve • Transient Thermal Impedance Curve vs Board Mounting Area • Switching Time vs RGS Curves Ordering Information PACKAGE BRAND HUFA76407DK8 MS-012AA 76407DK8 NOTE When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUFA76407DK8T. Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS Drain Current Continuous 122055o0oCCoC,, V,VVGGGSSS===1505VVV N FNoiotgetue2re3 Note 2 Continuous TA = 100oC, VGS = 4.5V Figure 2 Note 3 ID Pulsed Drain Current IDM Pulsed Avalanche Rating UIS Power Dissipation Note 2 PD Derate Above 25oC Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s TL Package Body for 10s, See Techbrief TB334. Tpkg NOTES TJ = 25oC to 125oC. 50oC/W measured using FR-4 board with in2 mm2 copper pad at 1 second. 228oC/W measured using FR-4 board with in2 mm2 copper pad at 1000 seconds. HUFA76407DK8 60 ±16 Figure 4 Figures 6, 17, 18 20 -55 to 150 300 260 UNITS V W mW/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: Reliability data can be found at All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2001 Fairchild Semiconductor Corporation HUFA76407DK8 Electrical Specifications TA = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ON STATE SPECIFICATIONS BVDSS IDSS IGSS ID = 250µA, VGS = 0V Figure 12 ID = 250µA, VGS = 0V , TA = -40oC Figure 12 VDS = 55V, VGS = 0V VDS = 50V, VGS = 0V, TA = 150oC VGS = ±16V Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS Thermal Resistance Junction to Ambient VGS TH rDS ON VGS = VDS, ID = 250µA Figure 11 ID = 3.8A, VGS = 10V Figures 9, 10 ID = 1.0A, VGS = 5V Figure 9 ID = 1.0A, VGS = 4.5V Figure 9

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Data Sheet

HUFA76407DK8

December 2001
3.5A, 60V, Ohm, Dual N-Channel, Logic Level Power MOSFET

Packaging

JEDEC MS-012AA

BRANDING DASH
1 2 3 4

SOURCE1 1 GATE1 2

SOURCE2 3 GATE2 4

DRAIN 1 8 DRAIN 1 7 DRAIN 2 6 DRAIN 2 5
• Ultra Low On-Resistance - rDS ON = VGS = 10V - rDS ON = VGS = 5V
• Simulation Models - Temperature Compensated and SABER Electrical Models - SPICE and SABER Thermal Impedance Models -
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Transient Thermal Impedance Curve vs Board Mounting

Area
• Switching Time vs RGS Curves
Ordering Information

PACKAGE

BRAND

HUFA76407DK8

MS-012AA
76407DK8
NOTE When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUFA76407DK8T.

Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified

Drain to Source Voltage Note 1 VDSS

Drain to Gate Voltage RGS = Note 1 VDGR

Gate to Source Voltage VGS

Drain Current

Continuous
122055o0oCCoC,, V,VVGGGSSS===1505VVV N FNoiotgetue2re3

Note 2

Continuous TA = 100oC, VGS = 4.5V Figure 2 Note 3 ID

Pulsed Drain Current IDM

Pulsed Avalanche Rating UIS

Power Dissipation Note 2 PD Derate Above 25oC

Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s TL Package Body for 10s, See Techbrief TB334. Tpkg

NOTES TJ = 25oC to 125oC. 50oC/W measured using FR-4 board with in2 mm2 copper pad at 1 second. 228oC/W measured using FR-4 board with in2 mm2 copper pad at 1000 seconds.

HUFA76407DK8 60 ±16

Figure 4 Figures 6, 17, 18 20 -55 to 150
300 260

UNITS V

W mW/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at:

Reliability data can be found at All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
2001 Fairchild Semiconductor Corporation

HUFA76407DK8

Electrical Specifications TA = 25oC, Unless Otherwise Specified

PARAMETER

TEST CONDITIONS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Source Leakage Current ON STATE SPECIFICATIONS

BVDSS IDSS IGSS

ID = 250µA, VGS = 0V Figure 12 ID = 250µA, VGS = 0V , TA = -40oC Figure 12

VDS = 55V, VGS = 0V VDS = 50V, VGS = 0V, TA = 150oC

VGS = ±16V

Gate to Source Threshold Voltage Drain to Source On Resistance

THERMAL SPECIFICATIONS Thermal Resistance Junction to Ambient

VGS TH rDS ON

VGS = VDS, ID = 250µA Figure 11 ID = 3.8A, VGS = 10V Figures 9, 10 ID = 1.0A, VGS = 5V Figure 9 ID = 1.0A, VGS = 4.5V Figure 9

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Datasheet ID: HUFA76407DK8T 633998