HUFA76404DK8T
HUFA76404DK8T Datasheet
HUFA76404DK8T N-Channel Dual MOSFET
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HUFA76404DK8T |
HUFA76404DK8T (pdf) |
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| HUFA76404DK8T N-Channel Dual MOSFET April 2005 HUFA76404DK8T N-Channel Dual MOSFET 62V, 3.2A, - rDS ON = Typ. , VGS = 5V, ID = 3.2A - Qg tot = 3.8nC Typ. , VGS = 5V - Low Miller Charge - Low QRR Body Diode - Optimized efficiency at high frequencies - UIS Capability Single Pulse and Repetitive Pulse - Internal RG = - Qualified to AEC Q101 - Motor / Body Load Control - ABS Systems - Powertrain Management - Injection Systems - DC-DC converters and Off-line UPS - Distributed Power Architectures and VRMs - Primary Switch for 12V and 24V systems Branding Dash SO-8 SOURCE 1 GATE 1 2 SOURCE 2 3 GATE 2 4 DRAIN 1 8 DRAIN 1 7 DRAIN 2 6 DRAIN 2 5 2005 Fairchild Semiconductor Corporation HUFA76404DK8T N-Channel Dual MOSFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TA = 25oC, VGS = 10V, = 50oC/W Continuous TA = 25oC, VGS = 5V, = 50oC/W Pulsed Single Pulse Avalanche Energy Note 1 Power dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics Pad Area = in2 323 mm2 Note 2 Pad Area = in2 mm2 Note 3 Pad Area = in2 mm2 Note 4 Package Marking and Ordering Information Device Marking 76404DK8 Device HUFA76404DK8T Package SO-8 Reel Size 330mm Ratings 62 ±20 Figure 4 128 20 -55 to 150 50 170 183 Units V A mJ W mW/oC oC/W oC/W oC/W Tape Width 12mm Quantity 2500 units Electrical Characteristics TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 55V, VGS = 0V VDS = 50V, VGS = 0V, TA = 150oC VGS = ±20V ±100 nA On Characteristics VGS TH Gate to Source Threshold Voltage rDS ON Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 3.6A, VGS = 10V ID = 3.2A, VGS = 5V Dynamic Characteristics CISS COSS CRSS RG Qg tot Qg TH Qgs Qgs2 Qgd VDS = 25V, VGS = 0V, f = 1MHz VGS = 0.5V, f = 1MHz VGS = 0V to 5V VGS = 0V to 1V VDD = 30V ID = 3.6A Ig = 1.0mA HUFA76404DK8T N-Channel Dual MOSFET |
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