HUFA75652G3

HUFA75652G3 Datasheet

HUFA75652G3

Part	Datasheet
HUFA75652G3	HUFA75652G3 (pdf)

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Data Sheet HUFA75652G3 December 2001 75A, 100V, Ohm, N-Channel Power MOSFET Packaging JEDEC TO-247 SOURCE DRAIN GATE DRAIN TAB HUFA75652G3 • Ultra Low On-Resistance - rDS ON = VGS = 10V • Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models - • Peak Current vs Pulse Width Curve • UIS Rating Curve Ordering Information PACKAGE BRAND HUFA75652G3 TO-247 75652G NOTE When ordering, use the entire part number. Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUFA75652G3 UNITS Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS ±20 Drain Current Continuous TC = 25oC, VGS = 10V Figure 2 ID Continuous TC = 100oC, VGS = 10V Figure 2 ID Pulsed Drain Current IDM Figure 4 Pulsed Avalanche Rating UIS Figure 6 Power Dissipation Note 2 Derate Above 25oC W/oC Operating and Storage Temperature TJ, TSTG -55 to 175 Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s TL Package Body for 10s, See Techbrief TB334. Tpkg NOTES TJ = 25oC to 150oC. CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: Reliability data can be found at All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2001 Fairchild Semiconductor Corporation HUFA75652G3 Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ON STATE SPECIFICATIONS BVDSS IDSS IGSS ID = 250µA, VGS = 0V Figure 11 VDS = 95V, VGS = 0V VDS = 90V, VGS = 0V, TC = 150oC VGS = ±20V Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS VGS TH rDS ON VGS = VDS, ID = 250µA Figure 10 ID = 75A, VGS = 10V Figures 9 Thermal Resistance Junction to Case

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Data Sheet

HUFA75652G3

December 2001
75A, 100V, Ohm, N-Channel Power MOSFET

Packaging

JEDEC TO-247

SOURCE DRAIN GATE

DRAIN TAB

HUFA75652G3
• Ultra Low On-Resistance - rDS ON = VGS = 10V
• Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models -
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information

PACKAGE

BRAND

HUFA75652G3

TO-247
75652G
NOTE When ordering, use the entire part number.

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

HUFA75652G3

UNITS

Drain to Source Voltage Note 1 VDSS

Drain to Gate Voltage RGS = Note 1 VDGR

Gate to Source Voltage VGS
±20

Drain Current

Continuous TC = 25oC, VGS = 10V Figure 2 ID

Continuous TC = 100oC, VGS = 10V Figure 2 ID

Pulsed Drain Current IDM

Figure 4

Pulsed Avalanche Rating UIS

Figure 6

Power Dissipation Note 2 Derate Above 25oC

W/oC

Operating and Storage Temperature TJ, TSTG
-55 to 175

Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s TL

Package Body for 10s, See Techbrief TB334. Tpkg

NOTES TJ = 25oC to 150oC.

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at:

Reliability data can be found at All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
2001 Fairchild Semiconductor Corporation

HUFA75652G3

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

TEST CONDITIONS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current

Gate to Source Leakage Current ON STATE SPECIFICATIONS

BVDSS IDSS

IGSS

ID = 250µA, VGS = 0V Figure 11 VDS = 95V, VGS = 0V VDS = 90V, VGS = 0V, TC = 150oC VGS = ±20V

Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS

VGS TH rDS ON

VGS = VDS, ID = 250µA Figure 10 ID = 75A, VGS = 10V Figures 9

Thermal Resistance Junction to Case

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Datasheet ID: HUFA75652G3 633991