PN2369_D26Z

PN2369_D26Z Datasheet

PN2369

Part	Datasheet
PN2369_D26Z	PN2369_D26Z (pdf)

Related Parts	Information
PN2369_D27Z	PN2369_D27Z
PN2369	PN2369

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PN2369 PN2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from process TO-92 1 Emitter Base Collector Absolute Maximum Ratings* Ta=25°C unless otherwise noted Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous TJ, TSTG Operating and Storage Junction Temperature Range * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Ratings 15 40 200 -55 ~ 150 NOTES 1 These rating are based on a maximum junction temperature of 150 degrees C. 2 These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Units V mA °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition Off Characteristics V BR CEO V BR CES V BR CBO V BR EBO ICBO Collector-Emitter Breakdown Voltage * Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current On Characteristics IC = 10mA, IB = 0 IC = 10µA, VBE = 0 IC = 10µA, IE = 0 IE = 10µA, IC = 0 VCB = 20V, IE = 0 VCB = 20V, IE = 0, Ta = 125°C DC Current Gain * VCE sat Collector-Emitter Saturation Voltage * VBE sat Base-Emitter Saturation Voltage Small Signal Characteristics IC = 10mA, VCE = 1.0V IC = 100mA, VCE = 2.0V IC = 10mA, IB = 1.0mA IC = 10mA, IB = 1.0mA Cobo Cibo hfe Output Capacitance Input Capacitance Small -Signal Current Gain VCB = 5.0V, IE = 0, f = 1.0MHz VEB = 0.5V, IC = 0, f = 1.0MHz IC = 10mA, VCE = 10V, RG = f = 100MHz

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PN2369

PN2369

NPN Switching Transistor
• This device is designed for high speed saturated switching at collector currents of 10mA to 100mA.
• Sourced from process

TO-92 1

Emitter Base Collector

Absolute Maximum Ratings* Ta=25°C unless otherwise noted

Parameter

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

Collector Current
- Continuous

TJ, TSTG

Operating and Storage Junction Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Ratings 15 40 200
-55 ~ 150

NOTES 1 These rating are based on a maximum junction temperature of 150 degrees C. 2 These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Units V mA °C

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

Off Characteristics

V BR CEO V BR CES V BR CBO V BR EBO ICBO

Collector-Emitter Breakdown Voltage * Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current

On Characteristics

IC = 10mA, IB = 0 IC = 10µA, VBE = 0 IC = 10µA, IE = 0 IE = 10µA, IC = 0 VCB = 20V, IE = 0 VCB = 20V, IE = 0, Ta = 125°C

DC Current Gain *

VCE sat Collector-Emitter Saturation Voltage * VBE sat Base-Emitter Saturation Voltage Small Signal Characteristics

IC = 10mA, VCE = 1.0V IC = 100mA, VCE = 2.0V

IC = 10mA, IB = 1.0mA

IC = 10mA, IB = 1.0mA

Cobo Cibo hfe

Output Capacitance Input Capacitance Small -Signal Current Gain

VCB = 5.0V, IE = 0, f = 1.0MHz

VEB = 0.5V, IC = 0, f = 1.0MHz IC = 10mA, VCE = 10V, RG = f = 100MHz

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Datasheet ID: PN2369_D26Z 634485