HUFA75545P3

HUFA75545P3 Datasheet

HUFA75545P3, HUFA75545S3S

Part	Datasheet
HUFA75545P3	HUFA75545P3 (pdf)

Related Parts	Information
HUFA75545S3S	HUFA75545S3S

PDF Datasheet Preview
Data Sheet HUFA75545P3, HUFA75545S3S December 2001 75A, 80V, Ohm, N-Channel, Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE DRAIN FLANGE HUFA75545P3 GATE SOURCE HUFA75545S3S • Ultra Low On-Resistance - rDS ON = VGS = 10V • Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models - • Peak Current vs Pulse Width Curve • UIS Rating Curve Ordering Information PACKAGE BRAND HUFA75545P3 TO-220AB 75545P HUFA75545S3S TO-263AB 75545S NOTE When ordering, use the entire part number. Add the T to obtain the TO-263AB variant in tape and reel, e.g., HUFA75545S3ST. Absolute Maximum Ratings TC = 25oC, Unless Otherwise HUFA75545P3, HUFA75545S3S UNITS Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS ±20 Drain Current Continuous T C T C 12050oCoC, V, VGGSS==1100VV F Figiguurere22 75 73 Pulsed Drain Current .IDM Figure 4 Pulsed Avalanche Rating .UIS Figure 6 Power Dissipation Derate Above 25oC Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. .TL Package Body for 10s, See Techbrief TB334 Tpkg NOTES: TJ = 25oC to 150oC. 270 -55 to 175 300 260 W/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: Reliability data can be found at All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2001 Fairchild Semiconductor Corporation HUFA75545P3, HUFA75545S3S Electrical TC = 25oC, Unless Otherwise PARAMETER TEST CONDITIONS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ON STATE SPECIFICATIONS BV DSS I DSS I GSS ID = 250µA, VGS = 0V Figure 11 VDS = 75V, VGS = 0V VDS = 70V, VGS = 0V, TC = 150oC VGS = ±20V Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS V GS TH r DS ON VGS = VDS, ID = 250µA Figure 10 ID = 75A, VGS = 10V Figure 9 Thermal Resistance Junction to Case

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Data Sheet

HUFA75545P3, HUFA75545S3S

December 2001
75A, 80V, Ohm, N-Channel, Power MOSFET

Packaging

JEDEC TO-220AB

JEDEC TO-263AB

SOURCE DRAIN GATE

DRAIN FLANGE

DRAIN FLANGE

HUFA75545P3

GATE SOURCE

HUFA75545S3S
• Ultra Low On-Resistance - rDS ON = VGS = 10V
• Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models -
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information

PACKAGE

BRAND

HUFA75545P3

TO-220AB
75545P

HUFA75545S3S

TO-263AB
75545S
NOTE When ordering, use the entire part number. Add the T to obtain the TO-263AB variant in tape and reel, e.g., HUFA75545S3ST.

Absolute Maximum Ratings TC = 25oC, Unless Otherwise

HUFA75545P3, HUFA75545S3S UNITS

Drain to Source Voltage Note 1 VDSS

Drain to Gate Voltage RGS = Note 1 VDGR

Gate to Source Voltage VGS
±20

Drain Current

Continuous

T C T C
12050oCoC, V, VGGSS==1100VV F Figiguurere22
75 73

Pulsed Drain Current .IDM

Figure 4

Pulsed Avalanche Rating .UIS

Figure 6

Power Dissipation Derate Above 25oC

Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s. .TL Package Body for 10s, See Techbrief TB334 Tpkg NOTES:

TJ = 25oC to 150oC.
270 -55 to 175
300 260

W/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied.

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at:

Reliability data can be found at All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
2001 Fairchild Semiconductor Corporation

HUFA75545P3, HUFA75545S3S

Electrical TC = 25oC, Unless Otherwise

PARAMETER

TEST CONDITIONS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current

Gate to Source Leakage Current ON STATE SPECIFICATIONS

BV DSS I DSS

I GSS

ID = 250µA, VGS = 0V Figure 11 VDS = 75V, VGS = 0V VDS = 70V, VGS = 0V, TC = 150oC VGS = ±20V

Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS

V GS TH r DS ON

VGS = VDS, ID = 250µA Figure 10 ID = 75A, VGS = 10V Figure 9

Thermal Resistance Junction to Case

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Datasheet ID: HUFA75545P3 633986