ARF441

ARF441 Datasheet

ARF440 125W 50V 13.56MHz

Part	Datasheet
ARF441	ARF441 (pdf)

Related Parts	Information
ARF440	ARF440

PDF Datasheet Preview
TO-247 ARF440 125W 50V 13.56MHz ARF441 125W 50V 13.56MHz THE ARF440 PIN-OUTS ARE MIRROR IMAGE OF THE ARF441. RF OPERATION 1-15MHz POWER MOS N - CHANNEL ENHANCEMENT MODE RF POWER MOSFET The ARF440 and ARF441 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull commercial, medical and industrial RF power amplifier applications. • Specified 50 Volt, MHz Characteristics • Low Cost Common Source RF Package. • Output Power = 125 Watts. • Very High Breakdown for Improved Ruggedness. • Gain = 21dB Typ. • Low Thermal Resistance. • Efficiency = 63% Typ. • Nitride Passivated Die for Improved Reliability. MAXIMUM RATINGS Symbol Parameter VDSS VDGO ID VGS PD TJ,TSTG TL Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current TC = 25°C Gate-Source Voltage Total Power Dissipation TC = 25°C Junction to Case Operating and Storage Junction Temperature Range Lead Temperature from Case for 10 Sec. All Ratings TC = 25°C unless otherwise specified. ARF440/441 UNIT 150 Volts Amps ±30 Volts Watts °C/W -55 to 150 °C STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250 µA VDS ON State Drain Voltage 1 ID ON = 10A, VGS = 10V IDSS Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V, TC = 125°C IGSS Gate-Source Leakage Current VGS = ±30V, VDS = 0V Forward Transconductance VDS = 10V, ID = 5.5A VGS TH Gate Threshold Voltage VDS = VGS, ID = 200mA TYP MAX UNIT Volts 6

PDF Datasheet Preview

TO-247

ARF440 125W 50V 13.56MHz

ARF441 125W 50V 13.56MHz

THE ARF440 PIN-OUTS ARE MIRROR IMAGE OF THE ARF441.

RF OPERATION 1-15MHz

POWER MOS

N - CHANNEL ENHANCEMENT MODE RF POWER MOSFET

The ARF440 and ARF441 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull commercial, medical and industrial RF power amplifier applications.
• Specified 50 Volt, MHz Characteristics
• Low Cost Common Source RF Package.
• Output Power = 125 Watts.
• Very High Breakdown for Improved Ruggedness.
• Gain = 21dB Typ.
• Low Thermal Resistance.
• Efficiency = 63% Typ.
• Nitride Passivated Die for Improved Reliability.

MAXIMUM RATINGS

Symbol Parameter

VDSS VDGO

ID VGS PD TJ,TSTG TL

Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current TC = 25°C Gate-Source Voltage Total Power Dissipation TC = 25°C Junction to Case Operating and Storage Junction Temperature Range Lead Temperature from Case for 10 Sec.

All Ratings TC = 25°C unless otherwise specified.

ARF440/441

UNIT
150 Volts

Amps
±30

Volts

Watts
°C/W
-55 to 150 °C

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250 µA

VDS ON State Drain Voltage 1 ID ON = 10A, VGS = 10V

IDSS

Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V, TC = 125°C

IGSS Gate-Source Leakage Current VGS = ±30V, VDS = 0V

Forward Transconductance VDS = 10V, ID = 5.5A

VGS TH Gate Threshold Voltage VDS = VGS, ID = 200mA

TYP MAX UNIT

Volts 6

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Datasheet ID: ARF441 648918