HUFA75433S3ST

HUFA75433S3ST Datasheet

HUFA75433S3S

Part	Datasheet
HUFA75433S3ST	HUFA75433S3ST (pdf)

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HUFA75433S3S March 2002 HUFA75433S3S N-Channel MOSFETs 60V, 64A, • Motor and Load Control • Powertrain Management • 175°C Maximum Junction Temperature • UIS Capability Single Pulse and Repetitive Pulse • Ultra-Low On-Resistance rDS ON = VGS = 10V TO-263AB FDB Series MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC = 25oC, VGS = 10V Continuous TC = 125oC, VGS = 10V, = 43oC/W Pulsed Single Pulse Avalanche Energy Note 1 Power dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Ratings 60 ±20 64 5 Figure 4 250 150 1 -55 to 175 Units V A mJ W/oC Thermal Characteristics Thermal Resistance Junction to Case TO-263 Thermal Resistance Junction to Ambient TO-263 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area oC/W oC/W oC/W This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: Reliability data can be found at All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2002 Fairchild Semiconductor Corporation HUFA75433S3S Package Marking and Ordering Information Device Marking 75433S3 Device HUFA75433S3ST HUFA75433S3S Package TO-263 TO-263 Reel Size 330mm Tube Tape Width 24mm N/A Quantity 800 units 50 units Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 55V, VGS = 0V VDS = 45V VGS = 0V TC= 150oC VGS = ±20V On Characteristics VGS TH Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ID = 64A, VGS = 10V rDS ON Drain to Source On Resistance ID = 64A, VGS = 10V, TJ = 175oC Dynamic Characteristics CISS COSS CRSS Qg TOT Qg 10 Qg TH Qgs Qgd VDS = 25V, VGS = 0V, f = 1MHz VGS = 0V to 20V VGS = 0V to 10V VDD = 30V VGS = 0V to 2V ID = 64A Ig = 1.0mA Switching Characteristics VGS = 10V Turn-On Time td ON Turn-On Delay Time

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HUFA75433S3S

March 2002

HUFA75433S3S

N-Channel MOSFETs 60V, 64A,
• Motor and Load Control
• Powertrain Management
• 175°C Maximum Junction Temperature
• UIS Capability Single Pulse and Repetitive Pulse
• Ultra-Low On-Resistance rDS ON = VGS = 10V

TO-263AB

FDB Series

MOSFET Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS VGS

EAS PD

Parameter Drain to Source Voltage

Gate to Source Voltage

Drain Current Continuous TC = 25oC, VGS = 10V Continuous TC = 125oC, VGS = 10V, = 43oC/W Pulsed

Single Pulse Avalanche Energy Note 1

Power dissipation Derate above 25oC

TJ, TSTG Operating and Storage Temperature

Ratings 60 ±20
64 5 Figure 4 250 150 1 -55 to 175

Units V

A mJ W/oC

Thermal Characteristics

Thermal Resistance Junction to Case TO-263

Thermal Resistance Junction to Ambient TO-263

Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
oC/W oC/W oC/W

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at:

Reliability data can be found at All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
2002 Fairchild Semiconductor Corporation

HUFA75433S3S
Package Marking and Ordering Information

Device Marking 75433S3

Device HUFA75433S3ST HUFA75433S3S

Package TO-263 TO-263

Reel Size 330mm Tube

Tape Width 24mm N/A

Quantity 800 units 50 units

Electrical Characteristics TC = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Source Leakage Current

ID = 250µA, VGS = 0V

VDS = 55V, VGS = 0V

VDS = 45V VGS = 0V

TC= 150oC

VGS = ±20V

On Characteristics

VGS TH

Gate to Source Threshold Voltage

VGS = VDS, ID = 250µA

ID = 64A, VGS = 10V
rDS ON

Drain to Source On Resistance

ID = 64A, VGS = 10V, TJ = 175oC

Dynamic Characteristics

CISS COSS CRSS Qg TOT Qg 10 Qg TH Qgs Qgd

VDS = 25V, VGS = 0V, f = 1MHz

VGS = 0V to 20V

VGS = 0V to 10V VDD = 30V

VGS = 0V to 2V ID = 64A

Ig = 1.0mA

Switching Characteristics VGS = 10V

Turn-On Time
td ON

Turn-On Delay Time

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Datasheet ID: HUFA75433S3ST 633985