HUFA75429D3ST

HUFA75429D3ST Datasheet

HUFA75429D3S

Part	Datasheet
HUFA75429D3ST	HUFA75429D3ST (pdf)

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HUFA75429D3S November 2003 HUFA75429D3S N-Channel MOSFETs 60V, 20A, • Motor & Load Control • Powertrain Management • 175°C Maximum Junction Temperature • UIS Capability Single Pulse and Repetitive Pulse • Ultra-Low On-Resistance rDS ON = VGS = 10V DRAIN FLANGE D GATE SOURCE TO-252 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC = 25oC, VGS = 10V Continuous TC = 125oC, VGS = 10V, = 52oC/W Pulsed Single Pulse Avalanche Energy Note 1 Power dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area Ratings 60 ±20 20 4 Figure 4 312 125 -55 to 175 100 52 Units V A mJ W/oC oC/W oC/W oC/W This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: Reliability data can be found at All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certifi- cation. 2003 Fairchild Semiconductor Corporation HUFA75429D3S Package Marking and Ordering Information Device Marking 75429D Device HUFA75429D3ST HUFA75429D3S Package TO-252 TO-252 Reel Size 330mm Tube Tape Width 16mm N/A Quantity 2500 units 75 units Electrical Characteristics TA = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 55V, VGS = 0V VDS = 45V VGS = 0V TC= 150oC VGS = ±20V On Characteristics VGS TH Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ID = 20A, VGS = 10V rDS ON Drain to Source On Resistance ID = 20A, VGS = 10V, TJ = 175oC Dynamic Characteristics CISS COSS CRSS Qg TOT Qg 10 Qg TH Qgs Qgd VDS = 25V, VGS = 0V, f = 1MHz VGS = 0V to 20V VGS = 0V to 10V VDD = 30V VGS = 0V to 2V ID = 20A Ig = 1.0mA Switching Characteristics VGS = 10V Turn-On Time td ON Turn-On Delay Time

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HUFA75429D3S

November 2003

HUFA75429D3S

N-Channel MOSFETs 60V, 20A,
• Motor & Load Control
• Powertrain Management
• 175°C Maximum Junction Temperature
• UIS Capability Single Pulse and Repetitive Pulse
• Ultra-Low On-Resistance rDS ON = VGS = 10V

DRAIN FLANGE D

GATE

SOURCE

TO-252

MOSFET Maximum Ratings TA = 25°C unless otherwise noted

Symbol VDSS VGS

EAS PD

Parameter Drain to Source Voltage

Gate to Source Voltage

Drain Current Continuous TC = 25oC, VGS = 10V Continuous TC = 125oC, VGS = 10V, = 52oC/W Pulsed

Single Pulse Avalanche Energy Note 1

Power dissipation Derate above 25oC

TJ, TSTG Operating and Storage Temperature

Thermal Characteristics

Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area

Ratings 60 ±20
20 4 Figure 4 312 125 -55 to 175
100 52

Units V

A mJ W/oC
oC/W oC/W oC/W

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at:

Reliability data can be found at All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certifi-
cation.
2003 Fairchild Semiconductor Corporation

HUFA75429D3S
Package Marking and Ordering Information

Device Marking 75429D

Device HUFA75429D3ST HUFA75429D3S

Package TO-252 TO-252

Reel Size 330mm Tube

Tape Width 16mm N/A

Quantity 2500 units 75 units

Electrical Characteristics TA = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Source Leakage Current

ID = 250µA, VGS = 0V

VDS = 55V, VGS = 0V

VDS = 45V VGS = 0V

TC= 150oC

VGS = ±20V

On Characteristics

VGS TH

Gate to Source Threshold Voltage

VGS = VDS, ID = 250µA

ID = 20A, VGS = 10V
rDS ON

Drain to Source On Resistance

ID = 20A, VGS = 10V, TJ = 175oC

Dynamic Characteristics

CISS COSS CRSS Qg TOT Qg 10 Qg TH Qgs Qgd

VDS = 25V, VGS = 0V, f = 1MHz

VGS = 0V to 20V

VGS = 0V to 10V VDD = 30V

VGS = 0V to 2V ID = 20A

Ig = 1.0mA

Switching Characteristics VGS = 10V

Turn-On Time
td ON

Turn-On Delay Time

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Datasheet ID: HUFA75429D3ST 633984