KSA3010RTU
KSA3010RTU Datasheet
KSA3010 PNP Epitaxial Silicon Transistor
| Part | Datasheet |
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KSA3010RTU |
KSA3010RTU (pdf) |
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| KSA3010 PNP Epitaxial Silicon Transistor KSA3010 PNP Epitaxial Silicon Transistor January 2007 • Audio Power Amplifier • High Current Capability IC = - 6A • High Power Dissipation • Wide S.O.A • Complement to KSC4010 TO-3P 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* Ta=25°C unless otherwise noted Parameter Value VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current DC Collector Current Pulse Collector Dissipation TC=25°C Junction Temperature TSTG Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. -120 -120 -5 -6 -12 60 150 - 50 ~ 150 NOTES 1 These ratings are based on a maximum junction temperature of 150°C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Units V A W °C °C Thermal Characteristics Ta=25°C unless otherwise noted Parameter Thermal Resistance, Junction to Case * Device mounted on the minimum pad size. Value Units °C/W Electrical Characteristics* Ta = 25°C unless otherwise noted Parameter Test Conditions BVCEO Collector-Emitter Breakdown Voltage ICBO Package Marking and Ordering Information Device Item note KSA3010RTU KSA3010OTU Device Marking A3010R A3010O Package TO-3P TO-3P Packing Method TUBE Note The Suffix “-TU” means the Tube packing method, which can be on fairchildsemi website at Qty pcs KSA3010 PNP Epitaxial Silicon Transistor 10ms Typical Characteristics IC A , COLLECTOR CRRENT VCE sat , SATURATION VOLTAGE IB=-100mA IB=-80mA 6 IB=-60mA IB=-40mA 4 IB=-20mA VCE V , COLLECTOR EMITTER VOLTAGE Figure Static Characteristic 10 IC=10IB TC=100℃ TC=25℃ IC A , COLLECTOR CURRENT Figure Collector-Emitter Saturation Voltage -100 IC MAX. Pulse IC MAX. DC 100ms DC *SINGLE NONREPETITIVE PULSE TC=25[oC] VCE[V], COLLECTOR-EMITTER VOLTAGE Figure Safe Operating Area IC[A], COLLECTOR CURRENT VCEO MAX PC W , POWER DISSIPATION IC A , COLLECTOR CURRENT hFE, DC CURRENT GAIN TC=100℃ TC=25℃ |
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