HUF76429D3ST

HUF76429D3ST Datasheet

HUF76429D3, HUF76429D3S

Part	Datasheet
HUF76429D3ST	HUF76429D3ST (pdf)

Related Parts	Information
HUF76429D3S	HUF76429D3S

PDF Datasheet Preview
Data Sheet HUF76429D3, HUF76429D3S February 2005 20A, 60V, Ohm, N-Channel, Logic Level Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA SOURCE DRAIN GATE DRAIN FLANGE HUF76429D3 GATE SOURCE DRAIN FLANGE HUF76429D3S • Ultra Low On-Resistance - rDS ON = VGS = 10V - rDS ON = VGS = 5V • Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models - • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves Ordering Information PACKAGE BRAND HUF76429D3 TO-251AA 76429D HUF76429D3S TO-252AA 76429D NOTE When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF76429D3ST. Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUF76429D3, HUF76429D3S UNITS Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS ±16 Drain Current Continuous TC= TC= TC= 122055oo0CCoC,, VV, VGGGSSS===150V5VV . ..F..ig..u..r..e.. Continuous TC= 100oC, VGS = 4.5V Figure 2 ID Pulsed Drain Current .IDM Figure 4 Pulsed Avalanche Rating .UIS Figures 6, 17, 18 Power Dissipation Derate Above 25oC Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. .TL Package Body for 10s, See Techbrief TB334. Tpkg NOTES TJ = 25oC to 150oC. 110 -55 to 175 300 260 W/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Product reliability information can be found at For severe environments, see our Automotive HUFA series. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2005 Fairchild Semiconductor Corporation HUF76429D3, HUF76429D3S Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ON STATE SPECIFICATIONS BVDSS IDSS IGSS ID = 250µA, VGS = 0V Figure 12 ID = 250µA, VGS = 0V , TC = -40oC Figure 12 VDS = 55V, VGS = 0V VDS = 50V, VGS = 0V, TC = 150oC VGS = ±16V Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS VGS TH rDS ON

PDF Datasheet Preview

Data Sheet

HUF76429D3, HUF76429D3S

February 2005
20A, 60V, Ohm, N-Channel, Logic Level Power MOSFET

Packaging

JEDEC TO-251AA

JEDEC TO-252AA

SOURCE DRAIN GATE

DRAIN FLANGE

HUF76429D3

GATE SOURCE

DRAIN FLANGE

HUF76429D3S
• Ultra Low On-Resistance - rDS ON = VGS = 10V - rDS ON = VGS = 5V
• Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models -
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves
Ordering Information

PACKAGE

BRAND

HUF76429D3

TO-251AA
76429D

HUF76429D3S

TO-252AA
76429D
NOTE When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF76429D3ST.

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

HUF76429D3, HUF76429D3S UNITS

Drain to Source Voltage Note 1 VDSS

Drain to Gate Voltage RGS = Note 1 VDGR

Gate to Source Voltage VGS
±16

Drain Current

Continuous

TC= TC= TC=
122055oo0CCoC,, VV, VGGGSSS===150V5VV . ..F..ig..u..r..e..

Continuous TC= 100oC, VGS = 4.5V Figure 2 ID

Pulsed Drain Current .IDM

Figure 4

Pulsed Avalanche Rating .UIS

Figures 6, 17, 18

Power Dissipation Derate Above 25oC

Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s. .TL Package Body for 10s, See Techbrief TB334. Tpkg NOTES TJ = 25oC to 150oC.
110 -55 to 175
300 260

W/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Product reliability information can be found at For severe environments, see our Automotive HUFA series.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
2005 Fairchild Semiconductor Corporation

HUF76429D3, HUF76429D3S

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

TEST CONDITIONS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Source Leakage Current ON STATE SPECIFICATIONS

BVDSS IDSS IGSS

ID = 250µA, VGS = 0V Figure 12 ID = 250µA, VGS = 0V , TC = -40oC Figure 12

VDS = 55V, VGS = 0V VDS = 50V, VGS = 0V, TC = 150oC

VGS = ±16V

Gate to Source Threshold Voltage Drain to Source On Resistance

THERMAL SPECIFICATIONS

VGS TH rDS ON

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Datasheet ID: HUF76429D3ST 633957