HUF75925D3ST

HUF75925D3ST Datasheet

HUF75925D3ST

Part	Datasheet
HUF75925D3ST	HUF75925D3ST (pdf)

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Data Sheet 11A, 200V, Ohm, N-Channel, Power MOSFET Packaging GATE SOURCE DRAIN FLANGE HUF75925D3ST JEDEC TO-252AA HUF75925D3ST August 2004 • Ultra Low On-Resistance - rDS ON = VGS = 10V • Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models - • Peak Current vs Pulse Width Curve • UIS Rating Curve Ordering Information PACKAGE BRAND HUF75925D3ST TO-252AA 75925D NOTE When ordering, use the entire part number. Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUF75925D3ST UNITS Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS ±20 Drain Current Continuous TC= 25oC, VGS = 10V Figure 2 ID Continuous TC= 100oC, VGS = 10V Figure 2 ID Pulsed Drain Current .IDM Figure 4 Pulsed Avalanche Rating .UIS Figures 6, 14, 15 Power Dissipation Derate Above 25oC Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. .TL Package Body for 10s, See Techbrief TB334. Tpkg NOTE TJ = 25oC to 150oC. 100 -55 to 175 300 260 W/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. 2004 Fairchild Semiconductor Corporation HUF75925D3ST Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ON STATE SPECIFICATIONS BVDSS IDSS IGSS ID = 250µA, VGS = 0V Figure 11 VDS = 190V, VGS = 0V VDS = 180V, VGS = 0V, TC = 150oC VGS = ±20V Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS VGS TH rDS ON VGS = VDS, ID = 250µA Figure 10 ID = 11A, VGS = 10V Figure 9 Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient TO-220 TO-220 TO-252 SWITCHING SPECIFICATIONS VGS = 10V Turn-On Time

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Data Sheet
11A, 200V, Ohm, N-Channel, Power MOSFET

Packaging

GATE SOURCE

DRAIN FLANGE

HUF75925D3ST

JEDEC TO-252AA

HUF75925D3ST

August 2004
• Ultra Low On-Resistance - rDS ON = VGS = 10V
• Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models -
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information

PACKAGE

BRAND

HUF75925D3ST

TO-252AA
75925D
NOTE When ordering, use the entire part number.

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

HUF75925D3ST

UNITS

Drain to Source Voltage Note 1 VDSS

Drain to Gate Voltage RGS = Note 1 VDGR

Gate to Source Voltage VGS
±20

Drain Current

Continuous TC= 25oC, VGS = 10V Figure 2 ID

Continuous TC= 100oC, VGS = 10V Figure 2 ID

Pulsed Drain Current .IDM

Figure 4

Pulsed Avalanche Rating .UIS

Figures 6, 14, 15

Power Dissipation Derate Above 25oC

Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s. .TL Package Body for 10s, See Techbrief TB334. Tpkg NOTE TJ = 25oC to 150oC.
100 -55 to 175
300 260

W/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
2004 Fairchild Semiconductor Corporation

HUF75925D3ST

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

TEST CONDITIONS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current

Gate to Source Leakage Current ON STATE SPECIFICATIONS

BVDSS IDSS

IGSS

ID = 250µA, VGS = 0V Figure 11 VDS = 190V, VGS = 0V VDS = 180V, VGS = 0V, TC = 150oC VGS = ±20V

Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS

VGS TH rDS ON

VGS = VDS, ID = 250µA Figure 10 ID = 11A, VGS = 10V Figure 9

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

TO-220 TO-220 TO-252

SWITCHING SPECIFICATIONS VGS = 10V

Turn-On Time

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Datasheet ID: HUF75925D3ST 633947