HUF75631P3
HUF75631P3 Datasheet
HUF75631P3, HUF75631S3ST
| Part | Datasheet |
|---|---|
HUF75631P3 |
HUF75631P3 (pdf) |
| Related Parts | Information |
|---|---|
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HUF75631S3S |
HUF75631S3S |
| PDF Datasheet Preview |
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| Data Sheet HUF75631P3, HUF75631S3ST December 2001 33A, 100V, Ohm, N-Channel, Power MOSFETs Packaging JEDEC TO-220AB SOURCE DRAIN GATE JEDEC TO-263AB DRAIN FLANGE DRAIN FLANGE HUF75631P3 GATE SOURCE HUF75631S3ST • Ultra Low On-Resistance - rDS ON = VGS = 10V • Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models - • Peak Current vs Pulse Width Curve • UIS Rating Curve Ordering Information PACKAGE BRAND HUF75631P3 TO-220AB 75631P HUF75631S3ST TO-263AB 75631S NOTE When ordering, use the entire part number, e.g., HUF75631S3ST. Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUF75631P3 HUF75631S3ST UNITS Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS ±20 Drain Current Continuous 12050oCoC, V, VGGSS==101V0V F Figiugruere2 2 33 23 Pulsed Drain Current IDM Figure 4 Pulsed Avalanche Rating UIS Figures 6, 14, 15 Power Dissipation 8 PD Derate Above 25oC W/oC Operating and Storage Temperature TJ, TSTG -55 to 175 Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief TB334. Tpkg NOTE: TJ = 25oC to 150oC. CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Product reliability information can be found at For severe environments, see our Automotive HUFA series. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2001 Fairchild Semiconductor Corporation HUF75631P3, HUF75631S3ST Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ON STATE SPECIFICATIONS BVDSS IDSS IGSS ID = 250µA, VGS = 0V Figure 11 VDS = 95V, VGS = 0V VDS = 90V, VGS = 0V, TC = 150oC VGS = ±20V Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS |
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