HUF75309T3ST

HUF75309T3ST Datasheet

HUF75309T3ST

Part	Datasheet
HUF75309T3ST	HUF75309T3ST (pdf)

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Data Sheet HUF75309T3ST January 2004 3A, 55V, Ohm, N-Channel UltraFET Power MOSFET Formerly developmental type TA75309. Ordering Information PACKAGE BRAND HUF75309T3ST SOT-223 75309 NOTE HUF75309T3ST is available only in tape and reel. • 3A, 55V • Ultra Low On-Resistance, rDS ON = • Diode Exhibits Both High Speed and Soft Recovery • Temperature Compensating Model • Thermal Impedance SPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging SOT-223 GATE DRAIN SOURCE DRAIN FLANGE Product reliability information can be found at For severe environments, see our Automotive HUFA series. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2004 Fairchild Semiconductor Corporation HUF75309T3ST Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS Drain Current Continuous Note 2 Figure ID Pulsed Drain Current IDM Pulsed Avalanche Rating EAS Power Dissipation Note 2 PD Derate Above 25oC Operating and Storage Temperature .TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s TL Package Body for 10s, See Techbrief 334 Tpkg HUF75309T3ST 55 ±20V 3 Figure 5 Figures 6, 14, 15 -55 to 150 300 260 UNITS V W mW/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE TJ = 25oC to 125oC. Electrical Specifications TA = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS Drain to Source Breakdown Voltage Gate to Source Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 10V Threshold Gate Charge BVDSS ID = 250µA, VGS = 0V Figure 11 VGS TH VGS = VDS, ID = 250µA Figure 10 IDSS VDS = 50V, VGS = 0V VDS = 45V, VGS = 0V, TA = 150oC IGSS VGS = ±20V rDS ON ID = 3A, VGS = 10V Figure 9

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Data Sheet

HUF75309T3ST

January 2004
3A, 55V, Ohm, N-Channel UltraFET Power MOSFET

Formerly developmental type TA75309.
Ordering Information

PACKAGE

BRAND

HUF75309T3ST SOT-223
75309

NOTE HUF75309T3ST is available only in tape and reel.
• 3A, 55V
• Ultra Low On-Resistance, rDS ON =
• Diode Exhibits Both High Speed and Soft Recovery
• Temperature Compensating Model
• Thermal Impedance SPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

Packaging

SOT-223

GATE DRAIN SOURCE

DRAIN FLANGE

Product reliability information can be found at For severe environments, see our Automotive HUFA series.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
2004 Fairchild Semiconductor Corporation

HUF75309T3ST

Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified

Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS Drain Current

Continuous Note 2 Figure ID Pulsed Drain Current IDM Pulsed Avalanche Rating EAS Power Dissipation Note 2 PD Derate Above 25oC Operating and Storage Temperature .TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s TL Package Body for 10s, See Techbrief 334 Tpkg

HUF75309T3ST 55
±20V
3 Figure 5 Figures 6, 14, 15
-55 to 150
300 260

UNITS V

W mW/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE TJ = 25oC to 125oC.

Electrical Specifications TA = 25oC, Unless Otherwise Specified

PARAMETER

TEST CONDITIONS

Drain to Source Breakdown Voltage Gate to Source Threshold Voltage Zero Gate Voltage Drain Current

Gate to Source Leakage Current Drain to Source On Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 10V Threshold Gate Charge

BVDSS ID = 250µA, VGS = 0V Figure 11

VGS TH VGS = VDS, ID = 250µA Figure 10

IDSS

VDS = 50V, VGS = 0V

VDS = 45V, VGS = 0V, TA = 150oC

IGSS

VGS = ±20V
rDS ON ID = 3A, VGS = 10V Figure 9

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived HUF75309T3ST Datasheet file may be downloaded here without warranties.

Datasheet ID: HUF75309T3ST 633927