BSO330N02KGFUMA1
BSO330N02KGFUMA1 Datasheet
BSO330N02K G
| Part | Datasheet |
|---|---|
BSO330N02KGFUMA1 |
BSO330N02KGFUMA1 (pdf) |
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| OptiMOS 2 Power-Transistor Features • For fast switching converters and sync. rectification • Qualified according to JEDEC1 for target applications • Super Logic level 2.5V rated N-channel • Dual n-channel • Excellent gate charge x R DS on product FOM • Low on-resistance R DS on • Avalanche rated • Pb-free plating RoHS compliant • Halogen-free according to IEC61249-2-21 BSO330N02K G Product Summary VDS RDS on ,max VGS=4.5 V VGS=2.5 V 20 V 30 mW 50 A PG-DSO-8 Type BSO330N02K Package PG-DSO-8 Marking 330N2K Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse V gs=4.5V, T C=25 °C2 V gs=4.5V, T C=70 °C2 V gs=2.5V, T C=25 °C2 V gs=2.5V, T C=70 °C2 T C=25 °C3 Avalanche energy, single pulse I D=6.5 A, R GS=25 W Operating and storage temperature dv /dt V GS P tot T j, T stg I D=6.5 A, V DS=20 V, di /dt =200 A/µs, T j,max=150 °C T A=25 °C2 T A=25 °C1 ESD Class IEC climatic category DIN IEC 68-1 Value Unit 10 secs steady state ±12 -55 150 0 0V to 250V 55/150/56 kV/µs V W 2013-11-11 Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient BSO330N02K G R thJS R thJA minimal footprint, t s |
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