HUF75309P3

HUF75309P3 Datasheet

HUF75309P3, HUF75309D3, HUF75309D3S

Part	Datasheet
HUF75309P3	HUF75309P3 (pdf)

Related Parts	Information
HUF75309D3S	HUF75309D3S
HUF75309D3ST	HUF75309D3ST

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HUF75309P3, HUF75309D3, HUF75309D3S Data Sheet December 2001 19A, 55V, Ohm, N-Channel UltraFET Power MOSFETs Formerly developmental type TA75309. Ordering Information PACKAGE BRAND HUF75309P3 TO-220AB 75309P HUF75309D3 TO-251AA 75309D HUF75309D3S TO-252AA 75309D NOTE When ordering, use the entire part number. Add the suffix T to obtain the TO-252AA variant in tape and reel, e.g., HUF75309D3ST. Packaging JEDEC STYLE TO-220AB DRAIN FLANGE SOURCE DRAIN GATE • 19A, 55V • Simulation Models - Temperature Compensated and SABER Models - SPICE and SABER Thermal Impedance Models Available on the WEB at: • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” JEDEC TO-251AA DRAIN FLANGE SOURCE DRAIN GATE JEDEC TO-252AA GATE SOURCE DRAIN FLANGE Product reliability information can be found at For severe environments, see our Automotive HUFA series. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2001 Fairchild Semiconductor Corporation HUF75309P3, HUF75309D3, HUF75309D3S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified UNITS Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS Drain Current ±20 Continuous Figure ID Pulsed Drain Current IDM Pulsed Avalanche Rating EAS Power Dissipation Derate Above 25oC Operating and Storage Temperature .TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s TL Package Body for 10s, See Techbrief 334 Tpkg 19 Figure 4 Figures 6, 14, 15 55 -55 to 175 300 260 W/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE TJ = 25oC to 150oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current

PDF Datasheet Preview

HUF75309P3, HUF75309D3, HUF75309D3S

Data Sheet

December 2001
19A, 55V, Ohm, N-Channel UltraFET Power MOSFETs

Formerly developmental type TA75309.
Ordering Information

PACKAGE

BRAND

HUF75309P3

TO-220AB
75309P

HUF75309D3

TO-251AA
75309D

HUF75309D3S

TO-252AA
75309D
NOTE When ordering, use the entire part number. Add the suffix T to obtain the TO-252AA variant in tape and reel, e.g., HUF75309D3ST.

Packaging

JEDEC STYLE TO-220AB

DRAIN FLANGE

SOURCE DRAIN GATE
• 19A, 55V
• Simulation Models
- Temperature Compensated and SABER Models
- SPICE and SABER Thermal Impedance Models Available on the WEB at:
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

JEDEC TO-251AA

DRAIN FLANGE

SOURCE DRAIN GATE

JEDEC TO-252AA

GATE SOURCE

DRAIN FLANGE

Product reliability information can be found at For severe environments, see our Automotive HUFA series.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
2001 Fairchild Semiconductor Corporation

HUF75309P3, HUF75309D3, HUF75309D3S

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

UNITS

Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS Drain Current
±20

Continuous Figure ID

Pulsed Drain Current IDM

Pulsed Avalanche Rating EAS

Power Dissipation Derate Above 25oC

Operating and Storage Temperature .TJ, TSTG Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s TL Package Body for 10s, See Techbrief 334 Tpkg
19 Figure 4 Figures 6, 14, 15
55 -55 to 175
300 260

W/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE TJ = 25oC to 150oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

TEST CONDITIONS

OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived HUF75309P3 Datasheet file may be downloaded here without warranties.

Datasheet ID: HUF75309P3 633926