HGTD3N60C3S9A

HGTD3N60C3S9A Datasheet

HGTD3N60C3S, HGTP3N60C3

Part	Datasheet
HGTD3N60C3S9A	HGTD3N60C3S9A (pdf)

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Data Sheet HGTD3N60C3S, HGTP3N60C3 December 2001 6A, 600V, UFS Series N-Channel IGBTs The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49113. Ordering Information PACKAGE BRAND HGTD3N60C3S TO-252AA G3N60C HGTP3N60C3 TO-220AB G3N60C NOTE When ordering, use the entire part number. Add the 9A to obtain the TO-252AA variant in Tape and Reel, i.e., HGTD3N60C3S9A. • 6A, 600V at TC = 25oC • 600V Switching SOA Capability • Typical Fall Time 130ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging JEDEC TO-252AA COLLECTOR FLANGE JEDEC TO-220AB EC G COLLECTOR FLANGE Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 2001 Fairchild Semiconductor Corporation HGTD3N60C3S, HGTP3N60C3 Absolute Maximum Ratings TC = 25oC Collector to Emitter Voltage .BVCES Collector Current Continuous ALL TYPES 600 6 3 24 ±20 ±30 18A at 480V 33 100 -40 to 150 300 260 UNITS V W/oC mJ oC oC µs CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied. Repetitive Rating Pulse width limited by maximum junction temperature. VCE PK = 360V, TJ = 125oC, RG = Electrical TC = 25oC, Unless Otherwise PARAMETER TEST CONDITIONS MAX UNITS Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA BV ECS I CES

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Data Sheet

HGTD3N60C3S, HGTP3N60C3

December 2001
6A, 600V, UFS Series N-Channel IGBTs

The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly developmental type TA49113.
Ordering Information

PACKAGE

BRAND

HGTD3N60C3S

TO-252AA

G3N60C

HGTP3N60C3

TO-220AB

G3N60C
NOTE When ordering, use the entire part number. Add the 9A to obtain the TO-252AA variant in Tape and Reel, i.e., HGTD3N60C3S9A.
• 6A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time 130ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Packaging

JEDEC TO-252AA

COLLECTOR FLANGE

JEDEC TO-220AB EC G

COLLECTOR FLANGE

Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,598,461 4,682,195 4,803,533 4,888,627
4,417,385 4,605,948 4,684,413 4,809,045 4,890,143
4,430,792 4,620,211 4,694,313 4,809,047 4,901,127
4,443,931 4,631,564 4,717,679 4,810,665 4,904,609
4,466,176 4,639,754 4,743,952 4,823,176 4,933,740
4,516,143 4,639,762 4,783,690 4,837,606 4,963,951
4,532,534 4,641,162 4,794,432 4,860,080 4,969,027
4,587,713 4,644,637 4,801,986 4,883,767
2001 Fairchild Semiconductor Corporation

HGTD3N60C3S, HGTP3N60C3

Absolute Maximum Ratings TC = 25oC

Collector to Emitter Voltage .BVCES Collector Current Continuous

ALL TYPES 600
6 3 24 ±20 ±30 18A at 480V 33 100 -40 to 150
300 260

UNITS V

W/oC
mJ oC
oC µs

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied.

Repetitive Rating Pulse width limited by maximum junction temperature. VCE PK = 360V, TJ = 125oC, RG =

Electrical TC = 25oC, Unless Otherwise

PARAMETER

TEST CONDITIONS

MAX UNITS

Collector to Emitter Breakdown Voltage

BVCES IC = 250µA, VGE = 0V

Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current

Collector to Emitter Saturation Voltage

Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA

BV ECS I CES

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Datasheet ID: HGTD3N60C3S9A 633896